Original title: Dark J–V Characteristics Model Of Chalcopyrite-Based Solar Cells
Authors: Škvarenina, L’ubomír
Document type: Papers
Language: eng
Publisher: Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií
Abstract: An equivalent circuit model of the current parasitic pathways is proposed to describe a behaviour of dark current density–voltage characteristics of chalcopyrite-based solar cells in order to understand a shunting behaviour between the ZnO:Al/i-ZnO/CdS/Cu(In;Ga)Se2/MoSe2/Mo/Ti/TiN layers. The model fitting with a parameter extraction is evaluated for the sample before and after an appearance of a permanent breakdown to prove an accurate response of the proposed model to an ohmic and non-ohmic component shift.
Keywords: CIGS; dark J–V characteristics; equivalent electrical model; heterojunction; parameters extraction; parasitic current pathways; solar cell; thin-film
Host item entry: Proceedings of the 24th Conference STUDENT EEICT 2018, ISBN 978-80-214-5614-3

Institution: Brno University of Technology (web)
Document availability information: Fulltext is available in the Brno University of Technology Digital Library.
Original record: http://hdl.handle.net/11012/138290

Permalink: http://www.nusl.cz/ntk/nusl-393476


The record appears in these collections:
Universities and colleges > Public universities > Brno University of Technology
Conference materials > Papers
 Record created 2019-03-14, last modified 2021-08-22


No fulltext
  • Export as DC, NUŠL, RIS
  • Share