Original title:
Local Isolation Of Microscale Defective Areas
In Monocrysline Silicon Solar Cells
Authors:
Gajdos, Adam Document type: Papers
Language:
eng Publisher:
Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií Abstract:
This article is aimed on characterization of silicon solar cells microstructural inhomogeneities. To detect inhomogeneity or imperfection, reverse biased current voltage (I-V) measurement is used. These imperfections in some cases may cause avalanche type of breakdown, that can be visible in I-V curve. Therefore, the fact that certain imperfections emit light is used for localization needs. Raw localization is provided by electroluminescence (EL) method. Near-field scanning microscopy (SNOM) combined with photomultiplier tube is used for microscale localization. Both methods are done in reverse bias. Isolation of inhomogeneity by focused ion beam (FIB) is avoiding leakage current flow through it.
Keywords:
electroluminescence; FIB; SEM; silicon; SNOM; Solar cell Host item entry: Proceedings of the 24th Conference STUDENT EEICT 2018, ISBN 978-80-214-5614-3
Institution: Brno University of Technology
(web)
Document availability information: Fulltext is available in the Brno University of Technology Digital Library. Original record: http://hdl.handle.net/11012/138288