Original title: Morphological Structure Of Solar Cells Based On Silicon And Gallium Arsenide After Ion Etching
Authors: Papež, Nikola
Document type: Papers
Language: eng
Publisher: Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií
Abstract: Study deals with the investigation of the surface after ion etching on two types of solar cells – based on widely available polycrystalline silicon and on durable gallium arsenide for use in more demanding environments. Solar cell morphology was compared using an electron microscope together with an Energy Dispersive X-ray detector to show distribution ratios of elements. Atomic force microscopy was used to accurately describe the heights and roughness structure. Raman spectroscopy to study of vibrational properties and the stress investigations.
Keywords: AFM; EDX; GaAs; ion bombardment; RIE; SEM; Si
Host item entry: Proceedings of the 24th Conference STUDENT EEICT 2018, ISBN 978-80-214-5614-3

Institution: Brno University of Technology (web)
Document availability information: Fulltext is available in the Brno University of Technology Digital Library.
Original record: http://hdl.handle.net/11012/138287

Permalink: http://www.nusl.cz/ntk/nusl-393473


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