Original title: Integrated Temperature Sensor Bipolar Core
Authors: Fránek, Jakub
Document type: Papers
Publisher: Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií
Abstract: Analog front-end of a bipolar transistor based smart temperature sensor was designed in 110 nm CMOS processing technology TSMC 110 and verified using simulation taking PVT variation into account. The analog front-end of the sensor achieves 3s inaccuracy of +-3.5 °C untrimmed or +-0.7 °C after single point trim over the military temperature range (-55 °C to 125 °C), requiring supply voltage of 2.7-3.63 V, consuming as little as 1μW at 1 S/s and taking up less than 0:012mm2.
Keywords: analog; bipolar; CMOS; integrated circuit; IP core; smart temperature sensor
Host item entry: Proceedings of the 24th Conference STUDENT EEICT 2018, ISBN 978-80-214-5614-3

Institution: Brno University of Technology (web)
Document availability information: Fulltext is available in the Brno University of Technology Digital Library.
Original record: http://hdl.handle.net/11012/138173

Permalink: http://www.nusl.cz/ntk/nusl-393359


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