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Original title:
Deformation of thin self-standing mask at inhomogeneous irradiation.
Authors: Koláček, Karel ; Schmidt, Jiří ; Frolov, Oleksandr ; Štraus, Jaroslav ; Chalupský, Jaromír ; Choukourov, A.
Document type: Papers
Conference/Event: International Workshop on Frontiers of X&XUV Optics and its Applications 2017, 3rd IW FX & XUVOA /3./, Prague (CZ), 20171004
Year: 2017
Language: eng
Abstract: Flatness of the mask is one of key features influencing the quality of image. Among factors that can affect mask flatness belongs inhomogeneous illumination. This does not apply to lithography, but to experiments that use only discrete parts of mask e.g. for nanostructuring or other type of material research. It is shown that even single EUV laser shot (laser wavelength ~46.9 nm, pulse duration ~1.5 ns, focused pulse energy ~20 .mu.J, peak fluency 48 J/cm2) not only deforms the mask, but also changes mask-substrate distance. In our case two kinds of grids (one circular with rectangular windows 7.5x7.5 μm and bars 5 micro m (period 12.5x12.5 micro m), other rectangular with rectangular windows 3.2x1.2 μm and bars 0.8 micro m (period 4x2 micro m)) were attached to PMMA substrate and exposed to one or five superimposed focused laser shots. The mask (grid) deformation was inferred from the changes of diffraction pattern engraved into PMMA.
Keywords: interaction of XUV radiation with solid surface; nanopatterning; nanostructuring; XUV diffraction
Project no.: LG15013 (CEP)
Funding provider: GA MŠk
Host item entry: Proceedings of the 3rd International Workshop on Frontiers of X&XUV Optics and its Applications, 3rd IW FX & XUVOA, ISBN 978-80-870026-09-0
Institution: Institute of Plasma Physics AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0280109
Permalink: http://www.nusl.cz/ntk/nusl-371472
The record appears in these collections:
Research > Institutes ASCR > Institute of Plasma Physics
Conference materials > Papers
Authors: Koláček, Karel ; Schmidt, Jiří ; Frolov, Oleksandr ; Štraus, Jaroslav ; Chalupský, Jaromír ; Choukourov, A.
Document type: Papers
Conference/Event: International Workshop on Frontiers of X&XUV Optics and its Applications 2017, 3rd IW FX & XUVOA /3./, Prague (CZ), 20171004
Year: 2017
Language: eng
Abstract: Flatness of the mask is one of key features influencing the quality of image. Among factors that can affect mask flatness belongs inhomogeneous illumination. This does not apply to lithography, but to experiments that use only discrete parts of mask e.g. for nanostructuring or other type of material research. It is shown that even single EUV laser shot (laser wavelength ~46.9 nm, pulse duration ~1.5 ns, focused pulse energy ~20 .mu.J, peak fluency 48 J/cm2) not only deforms the mask, but also changes mask-substrate distance. In our case two kinds of grids (one circular with rectangular windows 7.5x7.5 μm and bars 5 micro m (period 12.5x12.5 micro m), other rectangular with rectangular windows 3.2x1.2 μm and bars 0.8 micro m (period 4x2 micro m)) were attached to PMMA substrate and exposed to one or five superimposed focused laser shots. The mask (grid) deformation was inferred from the changes of diffraction pattern engraved into PMMA.
Keywords: interaction of XUV radiation with solid surface; nanopatterning; nanostructuring; XUV diffraction
Project no.: LG15013 (CEP)
Funding provider: GA MŠk
Host item entry: Proceedings of the 3rd International Workshop on Frontiers of X&XUV Optics and its Applications, 3rd IW FX & XUVOA, ISBN 978-80-870026-09-0
Institution: Institute of Plasma Physics AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0280109
Permalink: http://www.nusl.cz/ntk/nusl-371472
The record appears in these collections:
Research > Institutes ASCR > Institute of Plasma Physics
Conference materials > Papers
Record created 2018-03-07, last modified 2021-11-24