Original title:
Physical properties of InP epitaxial layers prepared with dysprosium admixture
Authors:
Grym, Jan ; Procházková, Olga Document type: Papers Conference/Event: Workshop 2003. Annual University-Wide Seminar /10./, Prague (CZ), 2003-02-10 / 2003-02-12
Year:
2003
Language:
eng Series:
CTU Reports., volume: 7, 2003 Sp. Issue Abstract:
Physical properties of commonly prepared InP layers grown by LPE technique and those grown from Dy treated melt are compared. The layers were examined by SEM, low temperature PL spectroscopy, C-V measurements and temperature dependent Hall effect. Structural, electrical and optical properties of InP layers exhibit a significant dependence on the presence of Dy and its concentration in the melt. When increasing the concentration of Dy the reversal of electrical conductivity occurs.
Keywords:
III-V semiconductors; liquid phase epitaxial growth; rare earth elements Project no.: CEZ:AV0Z2067918 (CEP), KSK1010104 Projekt 04/01:4043 (CEP), GA102/03/0379 (CEP) Funding provider: GA AV ČR, GA ČR Host item entry: Proceedings of Workshop 2003
Institution: Institute of Photonics and Electronics AS ČR
(web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences. Original record: http://hdl.handle.net/11104/0114298