Original title: Physical properties of InP epitaxial layers prepared with dysprosium admixture
Authors: Grym, Jan ; Procházková, Olga
Document type: Papers
Conference/Event: Workshop 2003. Annual University-Wide Seminar /10./, Prague (CZ), 2003-02-10 / 2003-02-12
Year: 2003
Language: eng
Series: CTU Reports., volume: 7, 2003 Sp. Issue
Abstract: Physical properties of commonly prepared InP layers grown by LPE technique and those grown from Dy treated melt are compared. The layers were examined by SEM, low temperature PL spectroscopy, C-V measurements and temperature dependent Hall effect. Structural, electrical and optical properties of InP layers exhibit a significant dependence on the presence of Dy and its concentration in the melt. When increasing the concentration of Dy the reversal of electrical conductivity occurs.
Keywords: III-V semiconductors; liquid phase epitaxial growth; rare earth elements
Project no.: CEZ:AV0Z2067918 (CEP), KSK1010104 Projekt 04/01:4043 (CEP), GA102/03/0379 (CEP)
Funding provider: GA AV ČR, GA ČR
Host item entry: Proceedings of Workshop 2003

Institution: Institute of Photonics and Electronics AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0114298

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