Original title:
Studium adsorpce a mobility atomů Al na povrchu Si(100)
Translated title:
Adsorption and mobility of Al adatoms on Si(100) surface
Authors:
Majer, Karel ; Ošťádal, Ivan (advisor) ; Mysliveček, Josef (referee) Document type: Master’s theses
Year:
2013
Language:
cze Abstract:
[cze][eng] Tématem práce je r st hliníkových útvar jednorozm rných etízk na povrchu Si(100). Pomocí STM byly zm eny r stové charakteristiky Al na Si(100) p i pokojové a vy í teplot a r zných hodnotách pokrytí. Výsledky jsou diskutovány v kontextu p edchozích experiment a je navr en zp sob ur ení aktiva ní energie povrchové migrace. D le itou ást práce tvo í p íprava a testování nové nízkoteplotní UHV aparatury pro m ení pomocí STM. Jsou popsány funkce aparatury. V dosud neznámých podmínkách byl nalezen postup p ípravy istého povrchu Si(100) a metody dosa ení atomárního rozli ení p i STM experimentu. Je popsán test sm rových vypa ovadel pro Al a Sn. Depozice Al na nové aparatu e dosud nebyla úsp ná. Depozice Sn prob hla správn a byly zobrazeny struktury Sn na Si(100) p i nízké teplot . Ty se li í od struktur pozorovaných p i pokojové teplot a byla v nich objevena kolena dosud pozorovaná výhradn u Al.The subject of the thesis is growth of aluminium structures one-dimensional chains on Si(100) surface. Growth characteristics of Al on Si(100) at room temperature and at higher temperature and various coverages were measured using STM. The results are discussed with respect to previous experiments and a way to find the value of activation energy of surface migration is proposed. An important part of the thesis is preparation and tests of a new low-temperature UHV apparatus for STM experiments. Functions of the apparatus are described. A way to prepare clean Si(100) surface as well as the methods of achieving atomic-scale resolution in STM were found in conditions previously unknown. A test of evaporators for Al and Sn is described. Al deposition has not been successful in the new apparatus yet. Sn deposition has been successful and low-temperature structures of tin on Si(100) were observed. They differ from room-temperature structures and contain kinks which were previously observed only in Al structures.
Keywords:
aluminium; growth; Si(100); STM; tin; cín; hliník; růst; Si(100); STM
Institution: Charles University Faculties (theses)
(web)
Document availability information: Available in the Charles University Digital Repository. Original record: http://hdl.handle.net/20.500.11956/52079