Original title: Epitaxial rectrystalization of the Ni/MgO(001)interface
Authors: Vacík, Jiří ; Naramoto, H. ; Yamamoto, S. ; Narumi, K. ; Havránek, Vladimír
Document type: Papers
Conference/Event: Konference českých a slovenských fyziků /14./, Plzeň (CZ), 2002-09-09 / 2002-09-12
Year: 2002
Language: eng
Abstract: Process of recrystallization of the epitaxially grown Ni layer deposited on the MgO(001) single crystal is studied. Thin Ni layer prepared by the vapor deposition of Ni on the MgO substrate kept were annealed between 500 and 1000 0C and systematically analyzed by Rutherford backscattering, X-ray diffraction and atomic force microscopy. Dramatic change in evolution of the crystalline quality was observed during the thermal treatment. The strain and defect density gradually decreased and at the temperature 1000 0C the strain-free Ni/MgO(001) interface was obtained.
Keywords: epitaxy; MgO; Ni
Project no.: CEZ:AV0Z1048901 (CEP)
Host item entry: Epitaxial rectrystalization of the Ni/MgO(001)interface

Institution: Nuclear Physics Institute AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0082179

Permalink: http://www.nusl.cz/ntk/nusl-27817


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