Home > Conference materials > Proceedings > Properties of Erbium-Doped Gallium Nitride Films Prepared by RF Magnetron Sputtering in Microwave and Optical Technology
Original title:
Properties of Erbium-Doped Gallium Nitride Films Prepared by RF Magnetron Sputtering in Microwave and Optical Technology
Translated title:
Magnetron Sputtering in Microwave and Optical Technology
Authors:
Prajzler, V. ; Schröfel, J. ; Hüttel, I. ; Špirková, J. ; Machovič, V. ; Oswald, J. ; Studnička, V. ; Novotná, M. ; Peřina, Vratislav Document type: Proceedings Conference/Event: Proceedings of SPIE, Ostrava (CZ), 2003-08-11 / 2003-08-15
Year:
2004
Language:
eng Series:
294-297 Abstract:
[eng][cze] The paper describes the preparation and properties of gallium nitride layers with erbium content.Vlastnosti Galium nitridových vrstev dopovaných erbiem připravených rf magnetronovým naprašováním a jejich vlastnosti v mikrovlnné a optické technologii.
Keywords:
erbium; gallium nitride; magnetron sputtering Project no.: CEZ:AV0Z1048901 (CEP), GA104/03/0385 (CEP) Funding provider: GA ČR
Institution: Nuclear Physics Institute AS ČR
(web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences. Original record: http://hdl.handle.net/11104/0012822