Original title: Lasers with thin strained InAs layers in GaAs absorption and electroluminescence
Translated title: Lasery s tenkými InAs vrstvami v GaAs - absorpce a elektroluminiscence
Authors: Mačkal, Adam
Document type: Papers
Conference/Event: International Student Conference on Electrical Engineering /7./, Praha (CZ), 2003-05-22
Year: 2003
Language: eng
Abstract: [eng] [cze]
Contribution presents the electroluminescence, photoabsorption and polarization properties of semiconductor lasers with thin strained InAs layers in GaAs at elevated temperature (above 25.sup.o./sup.C). The lasers exhibit high optical recombination efficiency, low threshold current density and wide temperature operation range Příspěvek obsahuje elektroluminiscenční, fotoabsorpční a polarizační vlastnosti polovodičových laserů s tenkými napjatými vrstvami InAs v GaAs při zvýšených teplotách (nad 25.sup.o./sup. C). Tyto lasery vykazují vysokou účinnost zářivé rekombinace, nízkou prahovou proudovou hustotu a široký obor pracovních teplot
Keywords: electroluminescence; GaAs; InAs; photoabsorption; polarisation; strained quantum well; elektroluminiscence
Project no.: IAA1010318 (CEP), CEZ:AV0Z1010914 (CEP), CEZ:MSM 212300014
Funding provider: GA AV ČR
Host item entry: Proceedings of the International Student Conference on Electrical Engineering

Institution: Institute of Physics AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0007549

Permalink: http://www.nusl.cz/ntk/nusl-19263


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