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Studie InAs/GaAs kvantových teček vypěstovaných technologií LP-MOVPE
Hazdra, P. ; Atef, M. ; Komarnitsky, V. ; Oswald, Jiří ; Kuldová, Karla ; Hulicius, Eduard
We show simulation study of electronic transition energy for InAs/GaAs quantum dots fabricated with LP-MOVPE. The simulation results were compared with experimental data obtained by AFM and photoluminescence.

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