|
|
Optoelectrical characterization of well oriented n-type zno nanorod arrays on p-type GaN templates
Yatskiv, Roman ; Grym, Jan ; Schenk, Antonín ; Vaniš, Jan ; Roesel, David ; Chlupová, Šárka
A heterojunction formed between a single n-type ZnO nanorod and p-type GaN template was successfully prepared by low cost chemical bath deposition technique. Periodic circular patterns were fabricated by focused ion beam etching through poly(methyl methacrylate) mask to control the size, position, and periodicity of the ZnO nanorods. A possible growth mechanism is introduced to explain the growth process of the nanorods. Optical and electrical properties of the heterojunctions were investigated by low temperature photoluminescence spectroscopy and by the measurement of current-voltage (I-V) characteristics. The I-V characteristics were measured by directly contacting single ZnO nanorods with the conductive atomic force microscopy tip. The diode-like rectifying behavior was observed with a turn-on voltage of 2.3 V and the reverse breakdown voltage was 5 V
|
|
|
Electrical properties of nanoscale heterojunctions formed between GaN and ZnO nanorods
Tiagulskyi, Stanislav ; Yatskiv, Roman ; Grym, Jan ; Schenk, Antonín ; Roesel, David ; Vaniš, Jan ; Hamplová, Marie
Vertical periodic arrays of ZnO nanorods are prepared by hydrothermal growth on GaN templates patterned by focused ion beam. Electro-physical properties of a single vertically-oriented ZnO nanorod are investigated by measuring the current-voltage characteristics using a nanoprobe in a scanning electron microscope. This technique enables to observe the surface morphology of ZnO nanorods simultaneously with their electrical characterization in vacuum. The vacuum chamber rejects the impact of gas adsorption and light irradiation, which both affect the properties of ZnO nanorods. Moreover, mechanical damage and strain induced during the nanorod transfer are eliminated. Nonlinear current-voltage characteristics under the forward bias are explained by the tunneling-recombination process and by the space charge limited current. The high reverse bias current in the p-n heterojunction is attributed to direct tunneling via a narrow tunnel barrier
|
|
|
Preparing of the Chameleon coating by the Ion Jet Deposition method
Skocdopole, J. ; Aversa, L. ; Golan, Martin ; Schenk, A. ; Baldi, G. ; Kratochvílová, Irena ; Kalvoda, L. ; Nozar, P.
Preparation of chameleon coatings using an Ionized Jet Deposition (IJD) technique is reported in the present paper. IJD is a new flexible method for thin film deposition developed by Noivion, Srl. The chameleon coatings are thin films characterised by a distinct change of their tribological properties according to the external conditions. The deposited films of SiC and TiN materials were examined by the Raman spectroscopy, SEM and XPS. The results of the Raman spectroscopy have proved an amorphous structure of SiC films. The data from XPS on TiN films have shown that the\nfilms are heavily oxidized, but also prove that the films are composed of TiN and pure Ti. The SEM provided information about the size of grains and particles constituting the deposited films, which is important for tribological properties of the films. Deposition of the chameleon coating is very complex problem and IJD could be ideal method for preparation of this coating.\n
|
host ::
RSS.