Original title: Graphite Schottky barriers on n-InP and n-GaN with deposited Pd, Pt or bimetallic Pd/Pt nanoparticles for H2 sensing
Authors: Žďánský, Karel ; Muller, M. ; Černohorský, Ondřej ; Yatskiv, Roman
Document type: Papers
Conference/Event: NANOCON 2011, 3 rd International Conference, Brno (CZ), 2011-09-21 / 2011-09-23
Year: 2011
Language: eng
Abstract: High Schottky barriers have been achieved by applying colloidal graphite on n-type InP and on n-type GaN semiconductor crystal wafers. The barrier heights were shown to be close to Schottky-Mott limit ad thermionic emission theory. Porous properties of the graphite Schottky contacts were demonstrated by scanning electron microscopy.
Keywords: nanostructures; semiconductor devices; sensors
Project no.: CEZ:AV0Z20670512 (CEP)
Host item entry: NANOCON 2011, Conference Proceedings, 3 rd International Conference, ISBN 978-80-87294-27-7

Institution: Institute of Photonics and Electronics AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0216248

Permalink: http://www.nusl.cz/ntk/nusl-96328


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Research > Institutes ASCR > Institute of Photonics and Electronics
Conference materials > Papers