Original title: Effect of the substrate crystalline orientation on the surface morphology and boron incorporation into epitaxial diamond layers
Authors: Voves, J. ; Pošta, A. ; Davydova, Marina ; Laposa, A. ; Povolný, V. ; Hazdra, P. ; Lambert, Nicolas ; Sedláková, Silvia ; Mortet, Vincent
Document type: Papers
Conference/Event: International Conference NANOCON 2020 /12./, Brno (CZ), 20201021
Year: 2021
Language: eng
Abstract: Epitaxial growth of diamond is critically important for the fabrication of diamond-based electronic devices. The emerging study of the epitaxial diamond growth on the (113) vicinal surfaces evidences highly needed high growth rates and low structural defects concentrations with both p- and n-type doping. In this work, we compare the morphology and dopant concentration incorporation of heavily boron-doped (113) epitaxial diamond layers with conventionally studied (100) and (111) epitaxial layers. Epitaxial layers were grown using resonance cavity Microwave Plasma Enhanced Chemical Vapor Deposition (MWPECVD) system. The surface morphology of epitaxial layers was studied by optical microscopy and atomic force microscopy, whereas the boron incorporation homogeneity was determined by Raman spectroscopy mapping.
Keywords: boron doping; defects; diamond; epitaxy; Raman mapping
Project no.: GA20-11140S (CEP), CZ.02.1.01/0.0/0.0/16_019/0000760, EF16_019/0000760
Funding provider: GA ČR, OP VVV - SOLID21, GA MŠk
Host item entry: NANOCON 2020. 12th International Conference on Nanomaterials - Research & Application. Conference proceedings, ISBN 978-80-87294-98-7, ISSN 2694-930X

Institution: Institute of Physics AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0327191

Permalink: http://www.nusl.cz/ntk/nusl-508424


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