Original title: LPE Growth of III-V Semiconductors from rare-earth Treated Melts
Authors: Grym, Jan ; Procházková, Olga ; Zavadil, Jiří ; Žďánský, Karel
Document type: Papers
Conference/Event: 18. Development of Materials Science in Research and Education, Hnanice (CZ), 2008-09-02 / 2008-09-05
Year: 2008
Language: eng
Abstract: We focus on the characterization of InP and InGaAsP layers prepared by liquid phase epitaxy with rare-earth admixtures. We applied photoluminescence spectroscopy (PL), capacitance-voltage measurements, and secondary ion mass spectroscopy in order to explain: (i) the gettering effect and conductivity crossover of InP layers for Pr treated samples, (ii) narrowing of the PL and elecroluminescent spectra of the active InGaAsP region of a double-heterostructure LED.
Keywords: III-V semiconductors; rare earth elements; semiconductor technology
Project no.: CEZ:AV0Z20670512 (CEP), GP102/08/P617 (CEP), GA102/06/0153 (CEP)
Funding provider: GA ČR, GA ČR
Host item entry: Proceedings of the 18th Joint seminar Development of materials science in research and education, ISBN 978-80-254-0864-3

Institution: Institute of Photonics and Electronics AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0187165

Permalink: http://www.nusl.cz/ntk/nusl-41598


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Research > Institutes ASCR > Institute of Photonics and Electronics
Conference materials > Papers