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Original title:
Model of carrier multiplication due to impurity impact ionization in boron-doped diamond
Authors: Mortet, Vincent ; Lambert, Nicolas ; Hubík, Pavel ; Soltani, A.
Document type: Papers
Conference/Event: NANOCON 2018 -International Conference on Nanomaterials - Research and Application /10./, Brno (CZ), 20181017
Year: 2019
Language: eng
Abstract: Boron-doped diamond exhibits a characteristic S-shaped I-V curve at room temperature [1] with two electrical conductivity states, i.e., low and high conductivity, at high electric fields (50 – 250 kV.cm-1) due to the carrier freeze-out and impurity impact ionization avalanche effect. To our knowledge, the carrier multiplication during the change of the conductivity state has not been studied. In this article, we investigate theoretically the effect of acceptor concentration and compensation level on the carrier multiplication coefficient at room temperature to determine the optimal dopants concentration of maximum carrier multiplication. The room temperature hole concentration of boron-doped diamond has been calculated for various acceptor concentration and compensation ratio by solving numerically the charge neutrality equation within the Boltzmann approximation of the Fermi-Dirac statistic.\n
Keywords: Boron-doped diamond; carrier multiplication coefficient; impurity impact ionization; semiconductor
Project no.: GA17-05259S (CEP), Fellowship J. E. Purkyně
Funding provider: GA ČR, AV ČR
Host item entry: NANOCON 2018 : Conference Proceedings of the International Conference on Nanomaterials - Research & Application /10./, ISBN 978-80-87294-89-5
Institution: Institute of Physics AS ČR (web)
Document availability information: Fulltext is available at external website.
External URL: https://www.nanocon.eu/files/uploads/01/NANOCON2018%20-%20Conference%20Proceedings_content.pdf
Original record: http://hdl.handle.net/11104/0306583
Permalink: http://www.nusl.cz/ntk/nusl-409694
The record appears in these collections:
Research > Institutes ASCR > Institute of Physics
Conference materials > Papers
Authors: Mortet, Vincent ; Lambert, Nicolas ; Hubík, Pavel ; Soltani, A.
Document type: Papers
Conference/Event: NANOCON 2018 -International Conference on Nanomaterials - Research and Application /10./, Brno (CZ), 20181017
Year: 2019
Language: eng
Abstract: Boron-doped diamond exhibits a characteristic S-shaped I-V curve at room temperature [1] with two electrical conductivity states, i.e., low and high conductivity, at high electric fields (50 – 250 kV.cm-1) due to the carrier freeze-out and impurity impact ionization avalanche effect. To our knowledge, the carrier multiplication during the change of the conductivity state has not been studied. In this article, we investigate theoretically the effect of acceptor concentration and compensation level on the carrier multiplication coefficient at room temperature to determine the optimal dopants concentration of maximum carrier multiplication. The room temperature hole concentration of boron-doped diamond has been calculated for various acceptor concentration and compensation ratio by solving numerically the charge neutrality equation within the Boltzmann approximation of the Fermi-Dirac statistic.\n
Keywords: Boron-doped diamond; carrier multiplication coefficient; impurity impact ionization; semiconductor
Project no.: GA17-05259S (CEP), Fellowship J. E. Purkyně
Funding provider: GA ČR, AV ČR
Host item entry: NANOCON 2018 : Conference Proceedings of the International Conference on Nanomaterials - Research & Application /10./, ISBN 978-80-87294-89-5
Institution: Institute of Physics AS ČR (web)
Document availability information: Fulltext is available at external website.
External URL: https://www.nanocon.eu/files/uploads/01/NANOCON2018%20-%20Conference%20Proceedings_content.pdf
Original record: http://hdl.handle.net/11104/0306583
Permalink: http://www.nusl.cz/ntk/nusl-409694
The record appears in these collections:
Research > Institutes ASCR > Institute of Physics
Conference materials > Papers
Record created 2020-02-12, last modified 2022-09-29