Original title: Characterization of hydrogenated silicon thin films and diode structures with integrated germanium nanoparticles
Authors: Stuchlík, J. ; Fajgar, R. ; Remeš, Z. ; Kupčík, Jaroslav ; Stuchlíková, H.
Document type: Papers
Conference/Event: NANOCON 2017. International Conference on Nanomaterials - Research & Application /9./, Brno (CZ), 20171018
Year: 2018
Language: eng
Abstract: P-I-N diode structures based on the thin films of amorphous hydrogenated silicon (a-Si: H) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique were prepared with embedded Si and Ge nanoparticles. The Reactive Laser Ablation (RLA) of germanium target was used to cover the intrinsic a-Si: H layer by Ge NPs under a low pressure of the silane. The RLA was performed using focused excimer ArF laser beam under SiH4 background atmosphere. Reaction between ablated Ge NPs and SiH4 led to formation of Ge NPs covered by thin GeSi: H layer. The deposited NPs were covered and stabilized by a-Si: H layer by PECVD. Those two deposition processes were alternated repeatedly. Volt-ampere characteristics of final diode structures were measured in dark and under illumination as well as their electroluminescence spectra.
Keywords: a-Si: H; Ge; nanoparticles; PECVD; PIN diode
Host item entry: Nanocon 2017 : conference proceedings : 9th International Conference on Nanomaterials - Research & Application, ISBN 9788087294819

Institution: Institute of Inorganic Chemistry AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0292719

Permalink: http://www.nusl.cz/ntk/nusl-391522


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Research > Institutes ASCR > Institute of Inorganic Chemistry
Conference materials > Papers
 Record created 2019-02-13, last modified 2019-10-20


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