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Imaging of SiCN thin films on silicon substrate in the scanning low energy electron microscope
Zobačová, Jitka ; Hüger, E. ; Urbánek, Michal ; Polčák, J. ; Frank, Luděk
The Si-C-N materials have been attracting growing interest due to their excellent physical properties. They are hard, possess a large band gap, resist harsh and high temperature environments, and exhibit interesting nanostrucrures such as turbosrtatic-carbon and nanopores. Their range of application includes anti-erosive turbines and cutting tools, opto-electronic materials, sensors and special drug delivery pharamaceutical products. Most of their interesting properties stems from carbon-nitrogen bonds. Hence, Si-C-N materials with a high content of carbon and nitrogen are of interest. Up to date, the highest carbon and nitrogen content could be synthesised in SiC2N4 and Si2CN4. Both chemical compositions are stable and possess the highest achieved carbon-nitrogen bond. Two different nitride bonding configuration was measured to be present.
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Ab initio study of phase stability in metals
Káňa, Tomáš ; Hüger, E. ; Šob, Mojmír
We employ ab initio calculations to study the behavior of total energy along the transformation paths between the hexagonal close-packed (hcp) structure and face-centered cubic (fcc) structure in Al, Co, Ni, Cu and Pd. We found one peculiar transformation path wit h extremely low energy barrier of only 0.010 eV/atom for Al, 0.020 eV/atom for Pd, 0.030 eV/atom for Cu, 0.033 eV/atom for Ni and 0.050 eV/atom for Co.
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