|
|
Interaction of organic molecules with metal passivated semiconductor surfaces studied via STM
Zimmermann, Petr ; Sobotík, Pavel (advisor) ; Plšek, Jan (referee) ; Šikola, Tomáš (referee)
Title Interaction of Organic Molecules with Metal Passivated Silicon Surfaces Studied via STM Author Petr Zimmermann Department Department of Plasma and Surface Science Supervisor Doc. RNDr. Pavel Sobotík, CSc. Department of Plasma and Surface Science Abstract Organic molecules offer a wide range of optical, electronic or chemical properties. Coupling them to silicon could pave way to novel applications and devices, however, a controlled molecular functionalization of silicon remains challenging due to the presence of highly reactive dangling bonds on its surfaces. We attempt to decrease the reactivity of low index silicon surfaces with an ultra-thin layer of a metal adsorbates and study their interaction with organic molecules via scanning tunnelling microscopy. In the first part we investigate the interaction of ethylene, a small unsaturated molecule, with tin and indium 1D chains grown on Si(001) - 2 × 1. The chains consist of dimers structurally analogous to the dimers of the underlying Si(001) - 2 × 1 surface. Aided by photoelectron spectroscopy we find that the Sn chains are less reactive than the Si(001) surface and that the absence of a π dimer bond renders indium chains inert. In the second part we study the interaction of copper phthalocyanine, a small macrocyclic heteroaromatic compound, with the...
|
|
|
Morphology study of ultra thin layers by XPS analysis of multiple peaks of a single element
Pokorný, David ; Šik, Ondřej (referee) ; Polčák, Josef (advisor)
This diploma thesis deals with methodology of thin film thickness determination using X-ray radiation of silver anode which provides radiation with energy of 2984,3 eV. This energy is twice as high as the standard aluminium radiation which allows a measurement of new photoelectron lines with higher bonding energy and it also provides thanks to the higher photoelectron energy greater information depth. In order to get the right results it was necessary to calibrate the spectrometer Kratos Axis Supra in the silver anode mode first and found out the form of the transmission function. The determination of the thickness of the thin layer was demonstrated by the comparation of the ratio of different photoelectron lines intensities with the theoretical model. For that purpose was specifically used the Si 1s and Si 2p peak bound in the substrate in the Si-Si bonding or in the thin oxid layer in the Si-O bonding. The results show that for thin SiO2/Si film thickness determination is the best to use the intensity ratio of only one photoelectron line. A silver anode however provides greater information depth.
|
|
|
Usage Of Low Cost Digital Camera For
Detecting Of Silicon Solar Cell
Electroluminiscence
Lepík, Pavel ; Vaněk, Jiří
This article analyses the existing methods both practically and theoretically used to detect defected surface area in solar cells. Various methods were used but by using an upgraded camera with CMOS sensor for carrying out the electroluminescence method, this has proven to have a very crucial impact on the results. Given the overall results and the acquired information, a procedure with a simple parameter can be setup to carry out the measurements. In addition to this a catalog was formed showing the defects occurring in mono and polycrystalline solar cells.
|
|
|
Local Isolation Of Microscale Defective Areas
In Monocrysline Silicon Solar Cells
Gajdos, Adam
This article is aimed on characterization of silicon solar cells microstructural inhomogeneities. To detect inhomogeneity or imperfection, reverse biased current voltage (I-V) measurement is used. These imperfections in some cases may cause avalanche type of breakdown, that can be visible in I-V curve. Therefore, the fact that certain imperfections emit light is used for localization needs. Raw localization is provided by electroluminescence (EL) method. Near-field scanning microscopy (SNOM) combined with photomultiplier tube is used for microscale localization. Both methods are done in reverse bias. Isolation of inhomogeneity by focused ion beam (FIB) is avoiding leakage current flow through it.
|
|
|
Thermal desorption spectroscopy in prototype furnace for chemical vapor deposition
Průcha, Lukáš ; Daniel, Benjamin ; Piňos, Jakub ; Mikmeková, Eliška
Cleaning of the sample surfaces is crucial for scanning electron microscopy, especially for\nlow energy electron microscopy or for the deposition of thin layers, such as graphene,\nwhere surface has to be well prepared. In the best case, every unwanted particle should be\ncleaned from the sample surface for best low energy electron microscopy observation or thin\nfilm deposition. Unfortunately, the standard cleaning procedures can leave residues on the\nsample surface. This work is focused on thermal desorption spectroscopy (TDS). TDS is a method of observing desorbed molecules from a sample surface during the increase of\ntemperature of the sample. The aim of this study was to determine optimum conditions:\ntemperature and time, to achieve clean surfaces in the shortest time.
|
|
|
Luminescence Diagnostic of Photovoltaic Cells
Stojan, Radek ; Frantík, Ondřej (referee) ; Šály,, Vladimír (referee) ; Vaněk, Jiří (advisor)
Diagnostic of photovoltaic cells defects is one of the key step in production. This dissertation thesis deals about diagnosis of photovoltaic cells by radiative recombination of electron - hole pairs. This radiative recombination is known as luminescence. Diagnostic methods using this local light emission in infrared region have innovative potential. The method of electroluminescence is one of the most widely used luminescence methods whose modifications are applied across the industry, especially in semiconductors. The main area of this thesis research is focused on non-destructive analysis of radiated infrared radiation of monocrystalline and polycrystalline solar cells in various modifications of standard electroluminescence method. In this research there are used two types of CCD cameras are used as luminescent radiation detectors. Method of photon emission microscopy is used for magnification element. Local light emission inspection by microscopy should have benefit to qualitative evaluation of solar cells defects. Radiation emitted by the solar cell has a wave character. This fact brings the potential of using some of the characteristics of the waves. We are talking about the intensity and mainly about new characterization by polarization during the detection of defects in the solar cell surface. Innovation of the measuring workplace of the standard electroluminescence method to use polarization analysis is one of the goals of this dissertation thesis.
|
|
|
Study of catalytic decomposition of silica
Štubian, Martin ; Kolíbal, Miroslav (referee) ; Bábor, Petr (advisor)
This thesis deals with catalytic decomposition of silica using electron microscopy and Auger spectroscopy. The thesis is primarily focused on the Au-Si phase, which is created during in the reaction. In the theoretical part, the principle of used methods is described and recherche on the catalytic decomposition of silica is presented. The practical part contains the results of the measurements and their interpretation.
|
|
|
Nickel silicides layer by electron beam melting of electro deposited layer
Petr, Jiří ; Pantělejev, Libor (referee) ; Jan, Vít (advisor)
This master’s thesis deals with the possibility of creating a compact nickel-silicide layer on austenitic substrates. The theoretical part describes a variety of surface treatments, silicide division, and basic principles of electron beam. The experimental part contains a description of used experimental methods for evaluation of samples, creation of Ni-Si coating using electroplating, and the parameters of electron beam used for melting the sample coating. The last part is devoted to structural evaluation of the sample coating and its microhardness.
|
|
|
Influence of Si surface passivation on growth and ordering of nanostructures
Matvija, Peter ; Kocán, Pavel (advisor) ; Rezek, Bohuslav (referee) ; de la Torre, Bruno (referee)
Silicon is currently the most widely used semiconductor material with applications ranging from solar cells and sensors to electronic devices. Surface functionalization of silicon with molecular monolayers can be used to tune properties of the material toward a desired application. However, site-specific adsorption of molecules or molecular patterning on silicon surfaces is a difficult task due to the high reactivity of silicon. In this work, we use scanning tunneling microscopy, ab-initio calculations and kinetic Monte Carlo simulations to study adsorption of organic molecules on a bare and thallium-passivated Si(111) surface. We show that the polarity of molecules has a large impact on bonding of the molecules with the bare surface. We demonstrate that, in comparison with the bare surface, molecules or single-atom adsorbates deposited on the Tl-passivated surface have significantly higher mobility. The increased mobility induces formation of 2D gases on the surface and enables formation of self-assembled molecular structures. We propose a novel method to directly visualize the 2D surface gases and we show that a phase of surface gases containing molecule-bound dipoles can be controlled by a non-homogeneous electric field. 1
|
|
|
Electrochemical etching of silicon
Vrzal, Pavel ; Voborný, Stanislav (referee) ; Šamořil, Tomáš (advisor)
The electrochemical etching is very used technique for semiconductor materials modification. Different structures which find applications in many fields (biotechnology, nanotechnology or electronics) can be prepared by this technique. The task of bachelor’s thesis was preparation of porous silicon using electrochemical etching. At first, a study dedicated to porous Si was carried out. Experimental part of this work deals with a design of etching cell which was used for preparation of porous silicon by electrochemical etching. In addition, the porous Si was prepared by metal assisted chemical etching. Subsequently, created structures were analyzed by scanning electron microscopy. Photoluminescence properties of porous silicon were studied as well.
|
guest ::
