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Epitaxial growth of cobalt islands via oxide mediated epitaxy
Stará, Veronika ; Kolíbal, Miroslav (referee) ; Čechal, Jan (advisor)
This bachelor thesis deals with preparation, growth and analysis of cobalt thin films. The films are formed on silicon (111) samples covered with a thin layer of native oxide SiO2. Cobalt thin films were prepared using oxide mediated epitaxy method with the effusion cell as a source of cobalt atoms. Composition and morphology of the resulting Co system was studied as a function of the annealing temperature. Another goal of this research was to determine the dependence of the final island shape on the amount of deposited material and substrate orientation. The prepared structures were analyzed using X-ray photoelectron spectroscopy, atomic force microscopy and scanning electron microscopy. To determine the thickness of subsurface islands the samples were etched in buffered hydrofluoric acid and analyzed using above mentioned methods.
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Preparation of Ag/Co/Ag Trilayers
Burda, Pavel ; Kolíbal, Miroslav (referee) ; Čechal, Jan (advisor)
The Bachelor's thesis is aimed to the preparation of silver and cobalt ultrathin films. The films are formed on modified surfaces of crystalline silicon substrates (SiO2/Si(111), Si(111) ?H, Si(111) 7×7) and amorphous SiO2 in a form of a quartz glass. Thin films are grown using an effusion cell for Molecular Beam Epitaxy (MBE). Surface modified surfaces are covered subsequently by a silver, cobalt and silver thin layer. The individual film thickness is 6 nm. Consequently the samples are studied by the X-ray Photoelectron Spectroscopy (XPS) and the Atomic Force Microscopy (AFM). The morphology of thin films and growth modes are compared among the substrates. Growth modes change with the surface modification type. Complete trilayer system Ag/Co/Ag was prepared on SiO2/Si(111) and Si(111) 7×7. Such system can be employed in plasmonics in order to allow the control of surface plasmon polariton properties by an external magnetic field.
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STM study of growing 1D nanostructures composed by III and IV group atoms
Kučera, Michael ; Ošťádal, Ivan (advisor) ; Mysliveček, Josef (referee)
In the presented work we study Al and Sn on a Si(100)2$\times$1 surface by means of STM. Peculiarities of displaying and morphology of metallic structures are investigated. Utilizing the STM to investigate Al and Sn, we obtain the growth characteristics for various coverage and temperatures at deposition. It is shown, that island size distribution is scalable for both metals and has a qualitatively different character. In order to interpret the growth characteristics and obtain unknown microscopic parameters, a new software tool for kinetic Monte Carlo (kMC) simulations of aluminum was conceived.
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STM study of growing 1D nanostructures composed by III and IV group atoms
Kučera, Michael ; Ošťádal, Ivan (advisor) ; Mysliveček, Josef (referee)
In the presented work we study Al and Sn on a Si(100)2$\times$1 surface by means of STM. Peculiarities of displaying and morphology of metallic structures are investigated. Utilizing the STM to investigate Al and Sn, we obtain the growth characteristics for various coverage and temperatures at deposition. It is shown, that island size distribution is scalable for both metals and has a qualitatively different character. In order to interpret the growth characteristics and obtain unknown microscopic parameters, a new software tool for kinetic Monte Carlo (kMC) simulations of aluminum was conceived.
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Epitaxial growth of cobalt islands via oxide mediated epitaxy
Stará, Veronika ; Kolíbal, Miroslav (referee) ; Čechal, Jan (advisor)
This bachelor thesis deals with preparation, growth and analysis of cobalt thin films. The films are formed on silicon (111) samples covered with a thin layer of native oxide SiO2. Cobalt thin films were prepared using oxide mediated epitaxy method with the effusion cell as a source of cobalt atoms. Composition and morphology of the resulting Co system was studied as a function of the annealing temperature. Another goal of this research was to determine the dependence of the final island shape on the amount of deposited material and substrate orientation. The prepared structures were analyzed using X-ray photoelectron spectroscopy, atomic force microscopy and scanning electron microscopy. To determine the thickness of subsurface islands the samples were etched in buffered hydrofluoric acid and analyzed using above mentioned methods.
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|
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Preparation of Ag/Co/Ag Trilayers
Burda, Pavel ; Kolíbal, Miroslav (referee) ; Čechal, Jan (advisor)
The Bachelor's thesis is aimed to the preparation of silver and cobalt ultrathin films. The films are formed on modified surfaces of crystalline silicon substrates (SiO2/Si(111), Si(111) ?H, Si(111) 7×7) and amorphous SiO2 in a form of a quartz glass. Thin films are grown using an effusion cell for Molecular Beam Epitaxy (MBE). Surface modified surfaces are covered subsequently by a silver, cobalt and silver thin layer. The individual film thickness is 6 nm. Consequently the samples are studied by the X-ray Photoelectron Spectroscopy (XPS) and the Atomic Force Microscopy (AFM). The morphology of thin films and growth modes are compared among the substrates. Growth modes change with the surface modification type. Complete trilayer system Ag/Co/Ag was prepared on SiO2/Si(111) and Si(111) 7×7. Such system can be employed in plasmonics in order to allow the control of surface plasmon polariton properties by an external magnetic field.
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