National Repository of Grey Literature 2 records found  Search took 0.01 seconds. 
Influence of Si doping in different layers on luminescence properties of InGaN/GaN multiple quantum well structure
Hájek, František ; Hospodková, Alice ; Oswald, Jiří ; Slavická Zíková, Markéta
Luminescence of InGaN/GaN multiple quantum well (MQW) structure is strongly affected by spontaneous and piezoelectric polarizations. To suppress them, doping with shallow impurities (e. g. Si) can be used. This works presents the effects of Si doping in different layers around the MQW area. On the basis of photoluminescence and cathodoluminescence measurements and band structure simulation, the piezoelectric field is most efficiently reduced when both layers under and over MQW area are Si doped.\n
Plasmachemical synthesis of borides, carbides and nitrides of transition metals
Brožek, Vlastimil ; Ctibor, Pavel
For technical practice the most important are up to now borides of titanium and zirconium, carbides of boron, calcium, silicium, titanium, zirconium, hafnium, aluminum and chromium. Nitrides of boron, silicium and titanium. Besides of tungssten carbide, any of the mentioned compounds is proced presently in the Czech Republic, however the know-how and suitable conditions are existing. The contribution describes possibilities of the processing of the mentioned materials to functional layers or thin-walled shaped parts by plasmachemical methods.

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