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National Repository of Grey Literature 2 records found  Search took 0.00 seconds. 
Asymetrie krystalografických pórů v polovodičích A.sup.3./sup. B.sup.5./sup
 Nohavica, Dušan ; Gladkov, Petar ; Jarchovský, Zdeněk
In the contribution the crucial influence of the (011) planes nonequivalence on pores formation in InP and some other A.sup.3./sup. B.sup.5./sup. semiconductors is demonstrated. In plane (01-1) are three different, crystallographically oriented (CO) sets of pores with three different orientations. In the perpendicular plane (011) triangular crossing points are observable. Heat treatment of the InP plates containing pores produce spherical figures which we have used to decrease the dislocation density in epitaxial layers by mechanism of the ELO.
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Příprava a vlastnosti heterostruktur GaInP.sub.2./sub./GaAs
 Nohavica, Dušan ; Gladkov, Petar ; Žďánský, Karel
Growth of the Ga.sub.x./sub.In.sub.1-x./sub.P/GaAs(100) heterostructures from the liquid phase was optimized at 800.sup.o./sup.C to obtain thick epitaxial layers. Experimental conditions for growth of the mirror like, morphological defects free structures are very narrow. Capping of the ternary layer by GaAs grown from the Bi or Bi-Ga melt was investigated as well. New model of the substrate planarity related defects has been suggested.
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