National Repository of Grey Literature 16 records found  previous11 - 16  jump to record: Search took 0.00 seconds. 
Preparation and properties of pyroelectric detectors for optoelectronic applications (II)
Novotný, Jan ; Zelinka, Jiří ; Podvalová, Zdislava ; Malina, Václav ; Vávra, Vladimír ; Krechler, Jindřich ; Franc, V. ; Fronc, Václav
Technology of preparation of doped single crystals of triglycine sulphate for application in optoelectronics is described. Internal report contains also technology of preparation of simple pyroelectric detectors which operate in infrared region, wavelengths 2-25ćm. Measurement methods for infrared detectors and their basic technical parameters are presented. The prepared infrared detectors operate as non-cooling elements with hybrid high impedance amplifier.
Preparation and properties of pyroelectric detectors for optoelectronic applications (I)
Novotný, Jan ; Březina, Bohumil ; Zelinka, Jiří ; Malina, Václav ; Vávra, Vladimír ; Zavadil, Jiří ; Velvarský, Jaroslav ; Fronc, Václav ; Pospíšil, Miroslav
The photodetectors operating in the 0.8-20ćm wavelength region have been prepared. The report is devoted to the research and realisation of novel types of materials on the basis TGS single crystals family. The prepared detectors have been tested in static and dynamical regime of operation. The obtained results have been passed on TESLA BLATNÁ Company.
RT growth of the micrometer-size C60 crystals in the Ni-C60 nano-composite
Vacík, Jiří ; Naramoto, H. ; Yamanoto, S. ; Narumi, K. ; Havránek, Vladimír
Growth of the multiply twinned C60 particles arisen from the Ni+C60 mixture at RT after lengthy time of development is reported. 10-micrometer large C60 particles grow as facetted crystals with polyhedral shapes stacking in complex superstructures. Mechanism of the particle formation is based on structure transformation of the layer highly stressed due to the co-deposition of the immiscible Ni and C60 components.
Příprava dopovaných a kodopovaných monokrystalů fosfidu inditého
Pekárek, Ladislav ; Žďánský, Karel
Indium phosphide crystals doped with various impurity atoms were grown by liquid encapsulation Czochralski method. The wafers of the grown crystals were characterized by resistivity an Hall measurements and their suitability for radiation detection was assessed.

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