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Processing of compact polycrystalline YAG ceramics
Kaplan, Lukáš ; Pouchlý, Václav (referee) ; Kachlík, Martin (advisor)
In the literary part of this master thesis a research on various methods of preparation of dense polycrystalline YAG ceramics and the effects of sintering on the densification and other desired properties of such prepared YAG ceramics was carried out, the transparency after addition of dopant elements was also discussed. In the experimental part of the thesis, samples of dense polycrystalline YAG ceramics were prepared by SSR method and the effect of sintering on the densification and porosity of the YAG ceramic samples was studied. Relative density, porosity, phase purity and transparency were measured on the sintered samples. These measurements were compared with the results of the works reported in the literature section.
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Processing of compact polycrystalline YAG ceramics
Kaplan, Lukáš ; Pouchlý, Václav (referee) ; Kachlík, Martin (advisor)
In the literary part of this master thesis a research on various methods of preparation of dense polycrystalline YAG ceramics and the effects of sintering on the densification and other desired properties of such prepared YAG ceramics was carried out, the transparency after addition of dopant elements was also discussed. In the experimental part of the thesis, samples of dense polycrystalline YAG ceramics were prepared by SSR method and the effect of sintering on the densification and porosity of the YAG ceramic samples was studied. Relative density, porosity, phase purity and transparency were measured on the sintered samples. These measurements were compared with the results of the works reported in the literature section.
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Luminescence properties of phosphors for highpower LED applications
Rejman, Martin ; Nikl, Martin (advisor) ; Mareš, Jiří A. (referee) ; Nejezchleb, Karel (referee)
For selected YAG:Ce sample the temperature dependent absorbtion and emission spectra were measured and used to simulate white LED behavior. Various CIE-xy dependencies were observed. Sample surface scaterring parameters were calibrated using a custom-made automated goniospektrometer, which provided measured data with fine accuracy. Finally, the measured data were used to construct a Geant4 simulation to optimize two light devices for output intensity and target CIE-xy coordinates. Powered by TCPDF (www.tcpdf.org)
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Preparation and optical properties of scintillation oxide layers
Hanuš, Martin ; Kučera, Miroslav (advisor) ; Čuba, Václav (referee) ; Pejchal, Jan (referee)
In this work we studied properties of garnet scintillator layers (RxLu3-xAl5O12, RxY3-xAl5O12) doped by rare earth ions (Ce, Pr, Tb), orthosilicates (Y2SiO5; R = Ce, Tb) and influence of Sc codoping on Pr3+ and Tb3+ emissions. The Zr codoping on Ce3+ emission in orthosilicates was also studied. The samples were prepared by liquid phase epitaxy. The studied materials show high quantum efficiency and good chemical and mechanical stability. They represent ideal materials for 2D imaging devices. We studied optical absorption, excitation and emission spectra and scintillation properties (radiolunescence and photoelectron yield). The aim was to determine the properties of grown layers and their comparison to Czochralski grown single crystals. We looked for the impact of melt and growth conditions on measured layer properties. We also tried to determine optimal amount of dopants in layer. We used PbO - B2O3 and BaO - BaF2 - B2O3 fluxes. Using these fluxes, we succeeded in growing layers with less intrinsic defects in crystal lattice in comparison to single crystals. In grown layers of thickness from 1 to 30 µm higher dopant concentration was achieved than in single crystals.
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Preparation and optical properties of scintillation oxide layers
Hanuš, Martin ; Kučera, Miroslav (advisor)
In this work we studied properties of garnet scintillator layers (RxLu3-xAl5O12, RxY3-xAl5O12) doped by rare earth ions (Ce, Pr, Tb), orthosilicates (Y2SiO5; R = Ce, Tb) and influence of Sc codoping on Pr3+ and Tb3+ emissions. The Zr codoping on Ce3+ emission in orthosilicates was also studied. The samples were prepared by liquid phase epitaxy. The studied materials show high quantum efficiency and good chemical and mechanical stability. They represent ideal materials for 2D imaging devices. We studied optical absorption, excitation and emission spectra and scintillation properties (radiolunescence and photoelectron yield). The aim was to determine the properties of grown layers and their comparison to Czochralski grown single crystals. We looked for the impact of melt and growth conditions on measured layer properties. We also tried to determine optimal amount of dopants in layer. We used PbO - B2O3 and BaO - BaF2 - B2O3 fluxes. Using these fluxes, we succeeded in growing layers with less intrinsic defects in crystal lattice in comparison to single crystals. In grown layers of thickness from 1 to 30 µm higher dopant concentration was achieved than in single crystals.
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Optical properties of thin film scintillators
Onderišinová, Zuzana
In the present work we studied Pr, Sc co-doped and Eu-doped Lu3Al5O12 thin epitaxial garnet layers prepared by liquid phase epitaxy (LPE) on Y3Al5O12 (YAG) and Lu3Al5O12 (LuAG) single crystalline substrates. In the process of growth BaO - BaF2 - B203 (Pr, Sc co - doped layers) and PbO - B2O3 (Eu - doped layers) fluxes were used. These materials are considered perspective scintillators with high density, fast scintillation response, high quantum efficiency and good chemical and mechanical stability. They are used in a number of applications in which high spatial resolution is required. The absorption, emission and excitation spectra of experimental samples were measured and investigated. Our attention was focused especially on the study of influence of Sc3+ ions on the emission properties of Pr3+ ions in epitaxial layers which mutually contain various amounts of concentrations of dopants. The Sc3+ ions do not show any radiative transitions in visible and UV spectral regions, but they increase the scintillation response of Pr3+ ions. This phenomenon is caused by overlappig of the Sc-related emission around 275 nm with the 4f-5d absorption band of Pr3+ centers. By measurement of radioluminescence this energy transfer from Sc3+ to Pr3+ activator centres was confirmed.
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Luminescence properties of phosphors for highpower LED applications
Rejman, Martin ; Nikl, Martin (advisor) ; Mareš, Jiří A. (referee) ; Nejezchleb, Karel (referee)
For selected YAG:Ce sample the temperature dependent absorbtion and emission spectra were measured and used to simulate white LED behavior. Various CIE-xy dependencies were observed. Sample surface scaterring parameters were calibrated using a custom-made automated goniospektrometer, which provided measured data with fine accuracy. Finally, the measured data were used to construct a Geant4 simulation to optimize two light devices for output intensity and target CIE-xy coordinates. Powered by TCPDF (www.tcpdf.org)
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Preparation and optical properties of scintillation oxide layers
Hanuš, Martin ; Kučera, Miroslav (advisor) ; Čuba, Václav (referee) ; Pejchal, Jan (referee)
In this work we studied properties of garnet scintillator layers (RxLu3-xAl5O12, RxY3-xAl5O12) doped by rare earth ions (Ce, Pr, Tb), orthosilicates (Y2SiO5; R = Ce, Tb) and influence of Sc codoping on Pr3+ and Tb3+ emissions. The Zr codoping on Ce3+ emission in orthosilicates was also studied. The samples were prepared by liquid phase epitaxy. The studied materials show high quantum efficiency and good chemical and mechanical stability. They represent ideal materials for 2D imaging devices. We studied optical absorption, excitation and emission spectra and scintillation properties (radiolunescence and photoelectron yield). The aim was to determine the properties of grown layers and their comparison to Czochralski grown single crystals. We looked for the impact of melt and growth conditions on measured layer properties. We also tried to determine optimal amount of dopants in layer. We used PbO - B2O3 and BaO - BaF2 - B2O3 fluxes. Using these fluxes, we succeeded in growing layers with less intrinsic defects in crystal lattice in comparison to single crystals. In grown layers of thickness from 1 to 30 µm higher dopant concentration was achieved than in single crystals.
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Preparation and optical properties of scintillation oxide layers
Hanuš, Martin ; Kučera, Miroslav (advisor)
In this work we studied properties of garnet scintillator layers (RxLu3-xAl5O12, RxY3-xAl5O12) doped by rare earth ions (Ce, Pr, Tb), orthosilicates (Y2SiO5; R = Ce, Tb) and influence of Sc codoping on Pr3+ and Tb3+ emissions. The Zr codoping on Ce3+ emission in orthosilicates was also studied. The samples were prepared by liquid phase epitaxy. The studied materials show high quantum efficiency and good chemical and mechanical stability. They represent ideal materials for 2D imaging devices. We studied optical absorption, excitation and emission spectra and scintillation properties (radiolunescence and photoelectron yield). The aim was to determine the properties of grown layers and their comparison to Czochralski grown single crystals. We looked for the impact of melt and growth conditions on measured layer properties. We also tried to determine optimal amount of dopants in layer. We used PbO - B2O3 and BaO - BaF2 - B2O3 fluxes. Using these fluxes, we succeeded in growing layers with less intrinsic defects in crystal lattice in comparison to single crystals. In grown layers of thickness from 1 to 30 µm higher dopant concentration was achieved than in single crystals.
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Optical properties of thin film scintillators
Onderišinová, Zuzana
In the present work we studied Pr, Sc co-doped and Eu-doped Lu3Al5O12 thin epitaxial garnet layers prepared by liquid phase epitaxy (LPE) on Y3Al5O12 (YAG) and Lu3Al5O12 (LuAG) single crystalline substrates. In the process of growth BaO - BaF2 - B203 (Pr, Sc co - doped layers) and PbO - B2O3 (Eu - doped layers) fluxes were used. These materials are considered perspective scintillators with high density, fast scintillation response, high quantum efficiency and good chemical and mechanical stability. They are used in a number of applications in which high spatial resolution is required. The absorption, emission and excitation spectra of experimental samples were measured and investigated. Our attention was focused especially on the study of influence of Sc3+ ions on the emission properties of Pr3+ ions in epitaxial layers which mutually contain various amounts of concentrations of dopants. The Sc3+ ions do not show any radiative transitions in visible and UV spectral regions, but they increase the scintillation response of Pr3+ ions. This phenomenon is caused by overlappig of the Sc-related emission around 275 nm with the 4f-5d absorption band of Pr3+ centers. By measurement of radioluminescence this energy transfer from Sc3+ to Pr3+ activator centres was confirmed.
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