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Elimination of defects in Si substrates by Rapid Thermal Process application
Frantík, Ondřej ; Hégr, Ondřej (referee) ; Szendiuch, Ivan (advisor)
Low cost, rapid and high thermal by IR heating, rapid cooling and high efficiency, there are RTP (Rapid Thermal Processing) properties. We can use RTP for annealing, diffusion, contacting, oxidation and others. Rapid temperature change and IR heating can be followed positive effects in the silicon substrate. This paper is focused on annealing by RTP. Wafers were p-type monocrystalline CZ silicon with different bulk minority carrier lifetime. Minority carrier lifetime was measured by MW-PCD (Microwave Photoconductance Decay) before and after thermal processing.
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Rapid Thermal Processing
Korvas, Jan ; Boušek, Jaroslav (referee) ; Mojrová, Barbora (advisor)
This work is focused on technologies using rapid thermal processes (RTP) to improve technological procedures. Main reasons of implementation of RTP technologies has been financial and time-consuming nature of regular procedures. The scale of utilization of RTP in the electro-technical industry is very wide, starting with simple operations like contacting up to more complicated ones like oxidation in inert atmospheres. This thesis captures a development of those procedures with a focus on fabrication of solar cells. The experimental part is focused on a draft of equipment for bonding of solar cells using short wave and middle wave infrared heaters. This thesis is being created in cooperation with the company Solartec, s. r. o.
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Rapid Thermal Processing
Korvas, Jan ; Boušek, Jaroslav (referee) ; Mojrová, Barbora (advisor)
This work is focused on technologies using rapid thermal processes (RTP) to improve technological procedures. Main reasons of implementation of RTP technologies has been financial and time-consuming nature of regular procedures. The scale of utilization of RTP in the electro-technical industry is very wide, starting with simple operations like contacting up to more complicated ones like oxidation in inert atmospheres. This thesis captures a development of those procedures with a focus on fabrication of solar cells. The experimental part is focused on a draft of equipment for bonding of solar cells using short wave and middle wave infrared heaters. This thesis is being created in cooperation with the company Solartec, s. r. o.
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|
|
Elimination of defects in Si substrates by Rapid Thermal Process application
Frantík, Ondřej ; Hégr, Ondřej (referee) ; Szendiuch, Ivan (advisor)
Low cost, rapid and high thermal by IR heating, rapid cooling and high efficiency, there are RTP (Rapid Thermal Processing) properties. We can use RTP for annealing, diffusion, contacting, oxidation and others. Rapid temperature change and IR heating can be followed positive effects in the silicon substrate. This paper is focused on annealing by RTP. Wafers were p-type monocrystalline CZ silicon with different bulk minority carrier lifetime. Minority carrier lifetime was measured by MW-PCD (Microwave Photoconductance Decay) before and after thermal processing.
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