|
|
STM study of adsorption and mobility of phtalocyanine molecules on passivated silicon surfaces at lower temperatures
Szabo, Michal ; Ošťádal, Ivan (advisor) ; Matvija, Peter (referee)
The thesis deals with an experiment for studying adsorption of phthalocyanin molecules on silicon surface passivated by a tin reconstruction. The main technique used for imaging surface is scanning tunneling microscopy (STM). The work contains a brief introduction to the studied problem. It deals with the STM method and STM construction. The used ultra-vacuum experimental system is characterized together with particular steps at sample preparation for STM measurements. During the sample preparation all necessary operations were tested on the newly modified system and calibration measurements of sample annealing and tin deposition were performed. A structure of the prepared surface Si(111) 7×7 was investigated by STM and conditions for the preparation in the new system were specified. STM images were used for an evaluation of results at optimizing preparation of the passivated surface. Obtained results are important for further experiments in frame of a research focused on growing molecular structures on silicon surfaces.
|
|
|
Modification of silicon surfaces for selective adsorption
Doležal, Jiří ; Ošťádal, Ivan (advisor) ; Matvija, Peter (referee)
This thesis is focused on adsorption of phthalocyanines on tin and indium passivated silicon Si(111) surfaces with the √3 × √3 reconstruction at room temperature. Scanning tunneling microscopy was used for obtaining atomically resolved surface images. Molecules on these surfaces predominantly adsorb on Si-substitutional defects. Local density of states (LDOS) of strongly adsorbed molecules was obtained by scanning tunneling spectroscopy. The origin of fuzzy imaging of molecules sitting on Si-substitutional double defects was probed. Voltage dependence of mean lifetime of two observed states, between which the "fuzzy" molecule is switching, was measured by analysis of tunneling current fluctuations. We discussed the influence of external parameters on the switching between the two states. We attribute the fuzzy behaviour of the molecule and resulting tunneling current fluctuations to the motion of the molecule in a double-well potential and propose two most likely kinds of the motion which most closely agree with the obtained data.
|
|
|
Influence of Si surface passivation on growth and ordering of nanostructures
Matvija, Peter ; Kocán, Pavel (advisor) ; Rezek, Bohuslav (referee) ; de la Torre, Bruno (referee)
Silicon is currently the most widely used semiconductor material with applications ranging from solar cells and sensors to electronic devices. Surface functionalization of silicon with molecular monolayers can be used to tune properties of the material toward a desired application. However, site-specific adsorption of molecules or molecular patterning on silicon surfaces is a difficult task due to the high reactivity of silicon. In this work, we use scanning tunneling microscopy, ab-initio calculations and kinetic Monte Carlo simulations to study adsorption of organic molecules on a bare and thallium-passivated Si(111) surface. We show that the polarity of molecules has a large impact on bonding of the molecules with the bare surface. We demonstrate that, in comparison with the bare surface, molecules or single-atom adsorbates deposited on the Tl-passivated surface have significantly higher mobility. The increased mobility induces formation of 2D gases on the surface and enables formation of self-assembled molecular structures. We propose a novel method to directly visualize the 2D surface gases and we show that a phase of surface gases containing molecule-bound dipoles can be controlled by a non-homogeneous electric field. 1
|
|
|
Influence of decreasing surface temperature of Si(100) on metal growth morphology at low coverage
Doležal, Jiří ; Ošťádal, Ivan (advisor) ; Matvija, Peter (referee)
The thesis is focused on study of growth of tin chains on Si(100) surface deposited by vacuum evaporation at temperatures below room temperature. Scanning tunneling microscopy (STM) was used for surface imaging and growth characteristics were determined from the data. Comparison of the characteristics for different deposition temperatures and two different coverages shows a dominant role of the same growth mechanism in all cases. An influence of heating toward room temperature on chain length distribution of structures prepared at low temperatures is described and discussed. A role of Cdefects at the chain growth and a corresponding influence on shape of a scaling function of the chain length distribution is discussed as well. Properties of the STM system with liquid nitrogen cooling were successfully tested together with developed pumping of nitrogen into a container inside the STM vacuum chamber.
|
|
|
Studium interakce adsorbátu s pasivovanými povrchy Si pomocí STM
Matvija, Peter ; Kocán, Pavel (advisor) ; Švec, Martin (referee)
The scanning tunneling microscopy is used to study the morphology of Tl adlayer in various stages of Tl desorption from the Si(111) surface and to study behaviour of various adsorbates on the Si(111)/Tl-(1 × 1). The utilization of thallium layer for passivation of the Si(111) was examined closely for various adsorbates. Manganese, aluminium, indium and tin layers which were directly deposited onto the Si(111)-(7 × 7) were compared with the layers prepared by deposition of adsorbate onto the passivating layer after the subsequent thermal desorption of Tl (after annealing at ≈ 400◦ C). Examined adsorbates exhibited signs of extremely high diffusivity and weak bond with the surface Si(111)/Tl- (1 × 1). The passivating layer was stable against the adsorbates.The application of thallium in the role of surfactant caused lowering of temperature and coverage needed for the preparation of reconstructions which were observed on the surfaces prepared by the direct deposition of adsorbate. 1
|
|
|
Interaction of metal atoms with metastable reconstructions of the Si(111) surface studied by STM
Matvija, Peter ; Kocán, Pavel (advisor) ; Ošťádal, Ivan (referee)
Process of reconstruction of Si(111) surface after vapor deposition of thallium and subsequent desorption is studied by STM. Dependency of surface coverage on temperature is determined and this dependency is afterwards used for determination of ideal conditions for creation of surface with the biggest possible part with metastable reconstructions (mostly (5x5) and (9x9)). This surface is then covered by vapor deposition by different amounts of Al and possibility of creation of magic clusters and other interesting structures is investigated. Structural models for magic clusters on (5x5) are proposed. The work includes description of experimental devices used in measurements as well as description of procedures and physical principles connected with functioning of STM.
|
|
|
Interaction of adsorbates with passivated Si surfaces studied by STM
Matvija, Peter ; Kocán, Pavel (advisor)
The scanning tunneling microscopy is used to study the morphology of Tl adlayer in various stages of Tl desorption from the Si(111) surface and to study behaviour of various adsorbates on the Si(111)/Tl-(1 × 1). The utilization of thallium layer for passivation of the Si(111) was examined closely for various adsorbates. Manganese, aluminium, indium and tin layers which were directly deposited onto the Si(111)-(7 × 7) were compared with the layers prepared by deposition of adsorbate onto the passivating layer after the subsequent thermal desorption of Tl (after annealing at ≈ 400◦ C). Examined adsorbates exhibited signs of extremely high diffusivity and weak bond with the surface Si(111)/Tl- (1 × 1). The passivating layer was stable against the adsorbates.The application of thallium in the role of surfactant caused lowering of temperature and coverage needed for the preparation of reconstructions which were observed on the surfaces prepared by the direct deposition of adsorbate. 1
|
guest ::
