National Repository of Grey Literature 98 records found  beginprevious35 - 44nextend  jump to record: Search took 0.00 seconds. 
Design of the new type of thermal atomic source for oxygen atoms
Šikula, Marek ; Bábor, Petr (referee) ; Mach, Jindřich (advisor)
Ultrathin oxid layers (especially high-k layers) are studied and fabricated by using atomic oxygen sources. These high-k ultrathin layers are integrated into CMOS transistors and DRAM capacitors. In this thesis theory of atomic oxygen beams and ways of theirs creation is summarized. On the basis of the obtained knowledge the engineering design of a unique type of the thermal atomic oxygen source is created. The design was tested by simple experiments. The 3D model and complete engineering drawings are included.
Testing of the new UHV scanning electron microscope and design of its effusion cel
Šárközi, Rudolf ; Mach, Jindřich (referee) ; Bábor, Petr (advisor)
This work focus on the development and the design of the effusion cell that is able to deposit different materials in downward orientation. The Cell itself should be placed into the ultra-vacuum microscope (UHV-SEM) developed in TESCAN company in the collaboration with Institute of Physical Engineering. Theoretical part is devoted to the description of the electron microscope and its, in the future installed, parts, which will be used for the preparation and the analysis of the nanostructures. In this work, the first measurements with the electron microscope are presented, and the influence of mechanical vibrations to image quality is discussed.
2D and 3D analysis of semiconductor devices by SIMS
Vařeka, Karel ; Šamořil, Tomáš (referee) ; Bábor, Petr (advisor)
The chemical analysis of semiconductor structures using the SIMS method is the main part of this bachelor thesis. It allows the user to make a depth profiling and a creation of 2D or 3D material images. During the analysis of the chip from the TIGBT semiconductor, there is a sputtering of a heterogeneous structure in the material with different sputtering rates. It is convenient to make a cut through the material using a focused ion beam to create a profile, which grants the user to perform a tomographic measurement. This new surface enables a chemical analysis of a depth profile of semiconductor structures without the need for sputtering beam in dynamic SIMS mode. By reconstructing individual two-dimensional images, it is possible to assemble a three-dimensional pattern of the analysed sample area. Also, the preparation and removal of the lamella from the TIGBT chip were accomplished and analysed via a detector of transmission electrons.
Quantitative analysis of matrix elements using SIMS and LEIS methods
Staněk, Jan ; Šik, Ondřej (referee) ; Bábor, Petr (advisor)
This thesis studies comparison and connection of two spectrometric methods – low energy ion scattering spektrometry (LEIS) and secondary ion mass spectrometry (SIMS). SIMS method, despite its many positive qualities, suffers of so called matrix effect, which makes quantifiaction of data very difficult. LEIS method on the other hand is immune to this effect and so it’s suitable completion of SIMS method. As a convenient sample have been chosen AlGaN samples with various concentration of gallium and aluminium. In the first part of thesis is introduced physical essence of SIMS and LEIS method, experimental details and studied samples. In second part of the thesis there’s a description of measurements and comparison of data gained by each method.
Complex ion beam based depth profiling of anticorrosive layers
Holeňák, Radek ; Král, Jaroslav (referee) ; Bábor, Petr (advisor)
Předložená diplomová práce se zabývá implementací metody rentgenové emisne indukované částicemi do experimentálního uspořádání za účelem doplnění rodiny metod založených na iontových technikách, tj. Rutherfordovy zpětné rozptylové spektrometrie, spektrometrie elastického zpětného rozptylu a analýzy detekce doby letu/energie elastického odrazu. Výhoda více-metodického přístupu je demonstrována na vrstvách ze slitin přechodných kovů obsahujících lehké prvky, kde samo-konzistentní analýza poskytuje výrazně zlepšené a přesné informace o stechiometrii, hloubkovém rozložení a tloušťce slitiny. Hmotnostní spektrometrie sekundárních iontů je použita pro porovnání a doplnění získaných výsledků.
Electron Beam Micromachining of Nonmetalic Materials
Dupák, Libor ; Mrňa, Libor (referee) ; Bábor, Petr (referee) ; Lencová, Bohumila (advisor)
The thesis deals with electron beam micromachining of nonmetallic materials like glass, ceramics and plastics. A brief description of the device on which the experiments were carried out is included; the author has participated on its development. Main topic is experimental study of influence of main electron beam parameters on results of machining. Examined parameters include accelerating voltage, beam current, focusing and speed of machining. Influence of beam deflection is analyzed. Method of sequential machining by repeated passes of the electron beam is presented. Main examined materials are quartz glass, alumina and selected plastics. The usefulness of the technology is shown by several practical applications.
Study of CO oxidation on platinum by UHV-SEM
Jaroš, Antonín ; Kolíbal, Miroslav (referee) ; Bábor, Petr (advisor)
This bachelor’s thesis is focused on the study of heterogeneous catalytic oxidation of CO on the surface of platinum, but also in the confined space between platinum and graphene. The thesis is separated into two parts – theoretical and experimental. In the theoretical part, there is a general explanation of important principles regarding this thesis, such as the stucture of scanning electron microscope, growth of graphene, evolution of the catalytic oxidation of CO and oscillatory mode of this reaction, and lastly evolution of the same reaction under the graphene. The experimental part is chronologically concerned about individual tasks of bachelor’s thesis.
Temperature drift compensation for nanostructure analysis
Hakira, Stanli ; Páleníček, Michal (referee) ; Bábor, Petr (advisor)
An ultra high vacuum apparatus for nanostructure experiments is being developed by the Tescan company in cooperation with the Institute of Physical Engineering of the Faculty of Mechanical Engineering. The apparatus is designed for preparation, modification, and analysis of nano-scale structures. A sample holder which allows heating and cooling has been developed for the apparatus. A scanning electron microscope is attached to the chamber to provide analytical and manufacturing capabilities. During experiments with heating enabled, the sample moves relative to the SEM column, causing drift of the image. This bachelor thesis proposes a solution to the problem of temperature drift by the means of motion tracking based on image registration using Fourier transform. An application complementary to the SEM control software which implements the algorithm was designed and tested at the instrument.
Analysis of GMR heterostructures by SIMS
Mitáš, Martin ; Nebojsa, Alois (referee) ; Bábor, Petr (advisor)
Studies of influence deposition parameters on heterostructures by SIMS
Ultrathin film analysis by SIMS and TOF-LEIS
Duda, Radek ; Lörinčík, Jan (referee) ; Bábor, Petr (advisor)
Study of possibilities of thin layers depth profiling by combined use of SIMS and ToF-LEIS methods.

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