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AlSb/InAsSb/AlSb deep QWs for the two band high temperature superlinear luminescence
Hulicius, Eduard ; Hospodková, Alice ; Pangrác, Jiří ; Mikhailova, M.
InAlAsSb/GaSb based hetero-nanostructures with deep quantum wells grown on GaSb are promising materials for the optoelectronic devices for near- and mid-IR spectral regions. Optical power and quantum efficiency of the LEDs based on the narrow bandgap semiconductor compounds (InGa)(AsSb) are limited by the nonradiative Auger recombination. Earlier we have proposed a method to increase the optical power in the bulk narrow bandgap and later in GaSb-based nanostructures with a deep QW by the effect of impact ionization on the QW with high band offset.

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