National Repository of Grey Literature 4 records found  Search took 0.00 seconds. 
Role of microscopic morphology in electrostatic charging of nanocrystalline diamond
Verveniotis, Elisseos ; Kromka, Alexander ; Rezek, Bohuslav
Self assembly of nanoparticles on NCD possible. Films macroscopically homogenous (SEM, Raman), however microsopic structural variations (SEM cross sections) do exist. Detailed KFM and CS-AFM measurements indicate that charge is mostly confined in the inter-grain space.
Electronic transport in intrinsic H-terminated nanocrystaline diamond with various grain size
Hubík, Pavel ; Mareš, Jiří J. ; Kozak, Halyna ; Kromka, Alexander ; Rezek, Bohuslav ; Krištofik, Jozef ; Kindl, Dobroslav
Both effective conductivity and Hall mobility of H-NCD were found to strongly decrease with the diminishing grain size. Effective Hall concentrations (to 1017 m-2) correspond to the true hole concentrations on the surface of the grain interiors. The effective Hall mobility is a robust parameter with respect to the surface conditions.
Electrostatic assembly of alumina nanoparticles on nanocrystalline diamond films
Verveniotis, Elisseos ; Kromka, Alexander ; Rezek, Bohuslav
We apply atomic force microscope for local electrostatic charging of oxygen-terminated nanocrystalline diamond (NCD) thin films deposited on silicon, to induce electrostatically driven self-assembly of colloidal alumina nanoparticles into micro-patterns. The NCD films have sub-100 nm thickness and 60% relative sp2 phase content. We characterize charge contrast and stability in air, fluorocarbon oil and water by Kelvin force microscopy. We discuss factors influencing the charging process and demonstrate that the contrast of more than ± 1 V is needed to induce selfassembly of the nanoparticles via coulombic and polarization forces.
Characteristics of nanocrystalline diamond SGFETs under cell culture conditions
Krátká, Marie ; Kromka, Alexander ; Rezek, Bohuslav ; Brož, A. ; Kalbáčová, M.
Characterization of electronic properties of protein diamond interface by using microscopic (20 μm) solution-gated field-effect transistors (SGFET) based on H-terminated nanocrystalline diamond films (NCD) on glass. We show that NCD films with grain sizes down to 80 nm and thickness down to 100 nm are operational as SGFETs.

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