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Proximity effect simulation for variable shape e-beam writer
Kolařík, Vladimír ; Matějka, Milan ; Urbánek, Michal ; Král, Stanislav ; Krátký, Stanislav ; Mikšík, P. ; Vašina, J.
Electron Beam Writer (EBW) is a lithographic tool allowing generation of patterns in high resolution. The writing is carried out into a layer of a sensitive material (resist), which is deposited on the substrate surface (e.g. silicon). The resolution of the EBW is limited not only by the beam spot size, but also by the electron scattering effects (forward scattering, backscattering). Thus, even if the beam spot size on the resist surface is very small, due to electron scattering effect in the resist, the exposed area is significantly broader than the original beam spot size [1, 2].
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