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High Efficiency n-type Monocrystalline Silicon Solar Cells
Mojrová, Barbora ; Kolařík, Vladimír (oponent) ; Poruba,, Aleš (oponent) ; Boušek, Jaroslav (vedoucí práce)
This dissertation is deals with searching and verifying of new processes contributing towards increase in efficiency of bifacial solar cells based on monocrystalline silicon n-type material. This work brings new knowledge about improvements in processes and methods used during its production at the ISC Konstanz. Within this work high efficiency n-type PERT (Passivated Emitter Rear Totally diffused) solar cells were made using standard mass-production facilities as in industrial production. This allows to show possibility of production high-quality n-type solar cells using almost the same equipment as for p-type solar cells. The efficiency increase was based on enhancing and balancing of individual production steps which were the same as in standard mass-production. Experiments described in this work vouch for the improvements in boron diffusion process, adjusting the passivation layer composition and its properties to new emitter design, and changes in metallization in term of using pure silver paste for emitter metallization, printing layout, and firing sequences. The structure and composition of ARC and passivation layer was investigated to reduce the process of Potential Induced Degradation (PID). The highest efficiency of the produced photovoltaics cells based on n-type material and made at standard process-line was 20. 9 %.
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Potential Induced Degradation Effect On N-Type Solar Cells With Boron Emitter
Mojrová, Barbora
This study is focusing on Potential Induced Degradation (PID) effect on n-type solar cells with boron emitter. We designed and fabricated single cell modules using n-PERT cells with textured and flat front side, and with various passivation structures on the front side to prevent PID at the cell level. The modules were characterized before and after PID testing by electroluminescence (EL), IV measurements, reflection and Internal Quantum Efficiency (IQE). Measurements were done on both sides of module to obtain whether the degradation was going on the front side, rear side or both. Comparison of IQE of front vs rear side shows, that intensity of degradation is fully influenced by properties of the front side of antireflection and passivation (ARC) layer.
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High Efficiency n-type Monocrystalline Silicon Solar Cells
Mojrová, Barbora ; Kolařík, Vladimír (oponent) ; Poruba,, Aleš (oponent) ; Boušek, Jaroslav (vedoucí práce)
This dissertation is deals with searching and verifying of new processes contributing towards increase in efficiency of bifacial solar cells based on monocrystalline silicon n-type material. This work brings new knowledge about improvements in processes and methods used during its production at the ISC Konstanz. Within this work high efficiency n-type PERT (Passivated Emitter Rear Totally diffused) solar cells were made using standard mass-production facilities as in industrial production. This allows to show possibility of production high-quality n-type solar cells using almost the same equipment as for p-type solar cells. The efficiency increase was based on enhancing and balancing of individual production steps which were the same as in standard mass-production. Experiments described in this work vouch for the improvements in boron diffusion process, adjusting the passivation layer composition and its properties to new emitter design, and changes in metallization in term of using pure silver paste for emitter metallization, printing layout, and firing sequences. The structure and composition of ARC and passivation layer was investigated to reduce the process of Potential Induced Degradation (PID). The highest efficiency of the produced photovoltaics cells based on n-type material and made at standard process-line was 20. 9 %.
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