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Národní úložiště šedé literatury Nalezeno 3 záznamů.  Hledání trvalo 0.00 vteřin. 
High-Voltage Devices in Smart Power Technology
 Šeliga, Ladislav ; Boušek, Jaroslav (oponent) ; Hégr, Ondřej (vedoucí práce)
This work describes fundamental characteristics of LDMOS transistors. In the first part of work are described properties of LDMOS transistors, the basic parameters and techniques to improve parameters of transistors. The next section discusses the reliability of LDMOS transistors. This section describes the safe operating area (SOA), hot carrier injection (HCI) and negative bias temperature instability (NBTI). The last theoretical section describes models used to simulate ESD events. The practical part is focused on simulation of the basic parameters PLDMOS and NLDMOS transistors and comparison of simulated and measured concentration profiles. Furthermore the thesis deals with simulation of the impact of changes in geometrical parameters of the PLDMOS transistor and the impact of these changes on the electrical parameters. The last part contains TLP simulations which examines electrical properties of PLDMOS transistor when is used as ESD protection.
Úplný záznam
Reverse recovery in power integrated circuits
 Šuľan, Dušan ; Žák, Jaromír (oponent) ; Boušek, Jaroslav (vedoucí práce)
The present Master’s thesis deals with the parameter "Reverse Recovery Time" for semiconductor devices and its impact on a typical switching circuits. The first part will clarify what is the "Reverse Recovery Time" and its individual parts is. The next section describes the physical principles. At the end of the theoretical part I am going to analyze the effect on the switching losses and the recommended method of measuring this parameter. The practical part focuses on simulations Dpdr45nres45 diodes in Cadence and TCAD. The last part deals with the design of the circuit for measurements real diodes and show diodes and transistors measurements.
Úplný záznam
High-Voltage Devices in Smart Power Technology
 Šeliga, Ladislav ; Boušek, Jaroslav (oponent) ; Hégr, Ondřej (vedoucí práce)
This work describes fundamental characteristics of LDMOS transistors. In the first part of work are described properties of LDMOS transistors, the basic parameters and techniques to improve parameters of transistors. The next section discusses the reliability of LDMOS transistors. This section describes the safe operating area (SOA), hot carrier injection (HCI) and negative bias temperature instability (NBTI). The last theoretical section describes models used to simulate ESD events. The practical part is focused on simulation of the basic parameters PLDMOS and NLDMOS transistors and comparison of simulated and measured concentration profiles. Furthermore the thesis deals with simulation of the impact of changes in geometrical parameters of the PLDMOS transistor and the impact of these changes on the electrical parameters. The last part contains TLP simulations which examines electrical properties of PLDMOS transistor when is used as ESD protection.
Úplný záznam

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