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Semiconductor devices production on silicon
Ježek, Vladimír ; Mikulík, Petr (referee) ; Špinka, Jiří (advisor)
This work deals with the basic technologies and processes of manufacturing semiconductor devices on a silicon substrate. Deals with the processes from creating a layer of silicon dioxide by oxidation, through the creation of structures using photolithography, the doping of additives into defined areas of diffusion, up to creating contacts and conductive pathways by sputtering. It also deals with the technological production process for silicon devices, description of devices and measurement, calculation layers of silicon dioxide, calculated of diffusion and measured characteristics of components and their evaluation.
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Analysis of Nanostructures by ToF-LEIS
Duda, Radek ; Král, Jaroslav (referee) ; Mašek, Karel (referee) ; Dub, Petr (advisor)
The presented thesis deals with the utilization of TOF-LEIS analytical method in the area of nanostructure analysis. A new procedure for depth profiling of the elemental composition of the sample, based on the alternate measurement with the DSIMS method, was established. The TOF-LEIS method is able to detect the interface between the layers before its mixing by the ion beam of the DSIMS method. Furthermore, a procedure of TOF-LEIS spektra modification was established to obtain the actual concentration of elements in the sample by reduction of a multiple collision contribution. By comparison of TOF-LEIS spectra with the results received by the DSIMS method the ratio of molybdenum and silicon ion yields was obtained. In the next section advantages of the TOF-LEIS method in combination with XPS during analysis of thermal stability of gold nanoparticles are presented. The mutual complementarity of both methods is shown and final conclusions are supported by electron microscopy images. The final section deals with a newly assembled apparatus for the TOF-SARS analytical method and shows its possibilities regarding the detection of hydrogen on the graphene.
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Testing and optimization of an ion source
Glajc, Petr ; Král,, Jaroslav (referee) ; Kolíbal, Miroslav (advisor)
A thorough description of the testing of a saddle-field ion source is presented in the diploma thesis. The most important experimental results, such as Faraday cup measurements of the ion beam current profile and of the ion energy spectra, are included. Based on these results it is shown that the optimized ion source works correctly and according to the expectations. At the end of the thesis, the development of the ion-optical and construction design of the focusing optics is described. The manufactured optics assembly attached to the ion source is also shown.
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Thin films modification by focussed ion beam.
Faltýnek, Petr ; Čechal, Jan (advisor)
The purpouse of the master's thesis is study problematic of focused ion beams and their material influence. In this thesis are described interactions in the sample after impact of ion beam, use and applications of FIB systems. Second part of thesis are simulations of ion influence on different kinds of materials by the help of SRIM program.
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Design of an ion source for sputtering
Glajc, Petr ; Voborný, Stanislav (referee) ; Kolíbal, Miroslav (advisor)
This bachelor's thesis deals with the development of a new type of an ion source. The aim is to design a saddle-field ion source for sputtering. The unique property of the design is that it combines classical cylindrical-symmetry saddle-field ion source with a hot cathode made of tungsten. In the first part of the thesis an overview of the published research in the field of ion sources is presented. The second part deals with an electrostatic-optical design of the source and with simulations of the electrostatic field including trajectories of electrons and ions. Also a crude estimation of the source parameters is made. In the third part the construction design based on previous simulations is described.
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Fabrication of Nanostructures Using Focused Ion Beam
Bartoš, Radko ; Tomanec, Ondřej (referee) ; Kolíbal, Miroslav (advisor)
This bachelor´s thesis deals with the ion-beam milling. Focused ion beam instrument is presented, as well as possibilities of initial setup conditions, which finally result in different nanostuctures´ shapes. In the thesis the methodology of fabrication and analysis of the nanostructures is described. Ideal ion beam setup conditions were deduced so that the nanostructures are of requested shape.
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In situ XPS characterization of diamond films after AR.sup.+./sup. cluster ion beam sputtering
Artemenko, Anna ; Babchenko, Oleg ; Kozak, Halyna ; Ukraintsev, Egor ; Ižák, Tibor ; Romanyuk, Olexandr ; Potocký, Štěpán ; Kromka, Alexander
In this work, in situ XPS analysis of chemical composition of H- and O-terminated nano- and microcrystalline diamond (NCD and MCD) films before and after their sputtering by the Ar+ cluster ion beam was investigated. Scanning electron microscopy confirmed sputtering of all diamond surfaces with a rate about 0.5 nm/min. Raman spectroscopy and XPS revealed surface graphitization of diamond surface induced by sputtering. Moreover, XPS data showed the presence of about 0.7 % of Ar atoms on the investigated diamond surface after 66 min of sputtering. Also, oxygen residuals were still presented on the H-NCD surface after 66 min of sputtering. In contrast, no oxygen was found on the H-MCD surface just after 2 min of sputtering. Surface composition is discussed in respect to the diamond films growth parameters and surface structure.
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Přístroj pro měření koncentračních profilů – Analýza výstupních dat
Čermák, Jiří ; Stloukal, Ivo
In this paper, a new modification of a commercial apparatus Edwards Coating system E306A is described that enables to perform diffusion measurements with radioactive tracers. The plan-parallel thin layers are removed by sputtering with Ar+ ions and the well defined fraction of the sputtered-off material is sequentially collected. The function of the apparatus is exemplified by the measurement of bulk diffusion coefficient of 65Zn in Fe40Ni40B20 alloy at T = 684 K.
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