|
|
Market survey of high power semiconductor devices
Jankovský, Martin ; Rujbrová, Šárka (referee) ; Zmrzlá, Petra (advisor)
Hlavním tématem práce jsou moderní výkonové polovodičové součástky. Jsou diskutovány i rozvíjející se materiály s velkou šířkou zakázaného pasu a jejich elektrické vlastnosti. Práce je pak zaměřena na tyto moderní součástky, včetně jejich teorie, aplikace a dostupnosti na trhu. Dále práce předkládá tabulky jednotlivých zařízení, které jsou nabízeny evropskými předními výrobci polovodičů.
|
|
|
Light ceramic materials for ballistic protection
Greguš, Peter ; Pouchlý, Václav (referee) ; Salamon, David (advisor)
This thesis gives a comprehensive characterization of lightweight non-oxide ceramic materials for ballistic applications, an overview of production technologies and processing of boron carbide B4C and its ceramic-based composites. A framework for evaluating the ballistic resistance of the material based on mechanical properties is shown there. It can be used in experiments without normalized equipment. The experiments including B4C + Si, B4C + Ti composites, and application of Spark plasma sintering (SPS) were designed according to outputs from the theoretical part. The volume fractions of Si, Ti dopants were optimized based on ongoing chemical reactions during sintering. The obtained samples were subjects of mechanical testing which results were compared to identify the ideal ratio of matrix and reinforcement. As the best suited material for ballistic protection, B4C + 1,0 obj. % reaches these values of parameters; hardness = 3502 ± 122 HV1; fracture toughness KIC = 2,97 ± 0,03 MPam^0,5.
|
|
|
Experimental flyback switching supply 1200 W/150 kHz with SiC switches
Grom, Martin ; Huták, Petr (referee) ; Vorel, Pavel (advisor)
This master’s thesis deals with design and construction of experimental flyback converter with utilization of novel lossless clamp circuit for switching transistor and with utilization of silicon carbide devices. The issue of flyback converter for higher power and possible control strategies are discussed. The thesis also describes power and control circuits design, design of PCB, construction of the converter and measured waveforms. End of the thesis contains technical documentation of designed board. Designed converter was successfully built and tested.
|
|
|
Graphene on SiC as a substrate for molecular self-assembly systems
Černá, Lenka ; Průša, Stanislav (referee) ; Procházka, Pavel (advisor)
This bachelor thesis deals with the fabrication and characterization of metal-organic frameworks formed by self-assembly mechanism of metal atoms (Fe) and organic molecules (tetracyanoquinodimethane, TCNQ) on a graphene surface. The fabrication of self-assembled structures has been performed on epitaxial graphene on SiC(0001) substrate. The deposition of metal-organic networks, as well as subsequent surface characterization by low-energy electron microscopy (LEEM) scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS), were performed under ultra-high vacuum conditions.
|
|
|
Magneto optical studies of solid states materials
Solodovnyk, Artur ; Malissa, Hans (referee) ; Tol, Johan van (referee) ; Neugebauer, Petr (advisor)
Elektricky detekovaná magnetická resonance (EDMR) je citlivá a užitečná technika pro výzkum základních vlastností polovodičů a pevných látek. Tato práce popisuje teorii elektronové paramagnetické resonance a spektroskopie EDMR v jejímž rámci je nastíněno několik modelů spinově závislé rekombinace. Instrumentační a softwarové části jsou ředstaveny spolu s vývojem nového držáku vzorku přímo pro EDMR. Plánujeme pozvednout výzkum na poli EDMR na vyšší úroveň pomocí vývoje zařízení, které bude pracovat při frekvencích až do 1.1 THz a externím magnetickém poli do 16 T. Vezmeme-li v potaz možnosti námi postaveného THz Frequency-Domain Rapid Scan (THz FraScan) spektrometru nacházejícího se na CEITEC VUT, vzorky budeme charakterizovat pomocí obou měřicích módu, tedy zvyšování magnetického pole nebo frekvence. V porovnání s konvenční kontinuální vlnou (CW) EDMR nám tato měření umožní získat nejen závislost změny napětí na externím magnetické poli při dané frekvenci, ale také akvizici map znázorňující závislost frekvence na magnetickém poli.
|
|
|
Electrical and optical properties of SiC single crystals
Brynza, Mykola ; Belas, Eduard (advisor)
Silicon carbide is a semiconductor with a wide bandgap of up to 3.2 eV and is capable of operating in extreme conditions, high temperature and high energy modes. This work focuses on the investigation of electrical and optical properties of monocrystalline SiC by various methods including Raman spectroscopy, volt-ampere characteristics, L-TCT and spectroscopic techniques. The adhesion of contacts and the influence of different contact materials on the ability to detect ionizing radiation are also studied to optimize the technology of preparation of quality SiC-based radiation detectors.
|
|
|
Electrical and optical properties of SiC single crystals
Brynza, Mykola ; Belas, Eduard (advisor) ; Štekl, Ivan (referee)
Silicon carbide is a semiconductor with a wide bandgap of up to 3.2 eV and is capable of operating in extreme conditions, high temperature and high energy modes. This work focuses on the investigation of electrical and optical properties of monocrystalline SiC by various methods including Raman spectroscopy, volt-ampere characteristics, L-TCT and spectroscopic techniques. The adhesion of contacts and the influence of different contact materials on the ability to detect ionizing radiation are also studied to optimize the technology of preparation of quality SiC-based radiation detectors.
|
|
|
Graphene on SiC as a substrate for molecular self-assembly systems
Černá, Lenka ; Průša, Stanislav (referee) ; Procházka, Pavel (advisor)
This bachelor thesis deals with the fabrication and characterization of metal-organic frameworks formed by self-assembly mechanism of metal atoms (Fe) and organic molecules (tetracyanoquinodimethane, TCNQ) on a graphene surface. The fabrication of self-assembled structures has been performed on epitaxial graphene on SiC(0001) substrate. The deposition of metal-organic networks, as well as subsequent surface characterization by low-energy electron microscopy (LEEM) scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS), were performed under ultra-high vacuum conditions.
|
|
|
Structure defects in SiC radiation detectors
Zetek, Matyáš ; Belas, Eduard (advisor)
Silicon carbide (SiC), is a wide band gap (2.4 eV < Eg < 3.3 eV) semiconducting material well known for its potential applications in high-temperature, high-power, high-frequency or hard radiation resistant devices. In this thesis, we are broadening elementary knowledge about this material. We identify energy levels in the material, using Photo-Hall effect spectroscopy supported by the temperature dependency of classic Hall effect measurement and temperature dependent photoluminescence. This knowledge is essential to allow SiC application as a radiation detector.
|
|
|
Electrical and optical properties of SiC single crystals
Brynza, Mykola ; Belas, Eduard (advisor) ; Štekl, Ivan (referee)
Silicon carbide is a semiconductor with a wide bandgap of up to 3.2 eV and is capable of operating in extreme conditions, high temperature and high energy modes. This work focuses on the investigation of electrical and optical properties of monocrystalline SiC by various methods including Raman spectroscopy, volt-ampere characteristics, L-TCT and spectroscopic techniques. The adhesion of contacts and the influence of different contact materials on the ability to detect ionizing radiation are also studied to optimize the technology of preparation of quality SiC-based radiation detectors.
|
guest ::
