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Photo-Hall effect spectroscopy and laser-induced transient currents in CdTe-based semiconductor radiation detectors
Musiienko, Artem ; Grill, Roman (advisor) ; Dubecký, František (referee) ; Oswald, Jiří (referee)
Title: Photo-Hall effect spectroscopy and laser-induced transient currents in CdTe-based semiconductor radiation detectors Author: Artem Musiienko Department / Institute: Institute of Physics, Faculty of Mathematics and Physics, Charles University Supervisor of the doctoral thesis: Prof. RNDr. Roman Grill, CSc, Institute of Physics, Faculty of Mathematics and Physics, Charles University Abstract: Cadmium Telluride, Cadmium Zinc Telluride, and Cadmium Manganese Telluride are important semiconductors with applications in radiation detection, solar cells, and electro-optic modulators. Their electrical and optical properties are principally controlled by defects forming energy levels within the bandgap. Such defects create recombination and trapping centers capturing photo- created carriers and depreciating the performance of the detector. Simultaneously, the changed occupancy of levels leads to the charging of detector's bulk, which results in the screening of applied bias and the loss of detector's sensitivity. Detailed knowledge of crystal defect structure is thus necessary for the predictable detector work and also for the possibility to reduce the structural defects concentration. This thesis reports on the investigation of deep energy levels in CdTe-based high resistivity and detector-grade materials by...
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Charge transport in semiconducting radiation detectors
Pipek, Jindřich ; Belas, Eduard (advisor) ; Hazdra, Pavel (referee)
This thesis is focused on study of charge transport in semiconducting radiation detectors. Theoretical calculations of current waveforms based on continuity equation and drift-diffusion equation are done. Useful approximations of current waveforms for detector with shallow electron trap are discussed. Monte Carlo simulation of the current waveforms is proposed and applied to fit experimental current waveforms measured using laser-induced transient current technique and for evaluation of charge transport parameters of the detector such as electric field profile, trapping and detrapping time of traps, drift mobility and other parameters. Detectors prepared from semi-insulating GaAs and CdZnTe single crystals are tested using electrical, spectroscopic and optical characterization techniques.
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Charge transport optical characterization in semiconductor radiation detectors
Ridzoňová, Katarína ; Belas, Eduard (advisor)
Measurements of DC photocurrent-voltage characteristic, photocurrents spectral response and laser induced transient current technique enable investigation of surface recombination centers, bulk trap levels and distribution of the inner electric field. In the presented work, the n- type planar CdZnTe detectors with quasi Ohmic contacts were studied by above mentioned methods. It has been shown that in the case of strongly absorbed light under the DC regime of illumination not only surface recombination influences the detector's transport properties. The effect of the space charge, created as a consequence of carriers trapped by the impurity levels, must be taken into account. Therefore some new theoretical models were created in order to describe measured photocurrent-voltage dependencies. Obtained data were fitted with the new theory and the mobility and surface recombination velocity for electrons were determined.
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Room-temperature semiconducting detectors
Pekárek, Jakub ; Belas, Eduard (advisor) ; Oswald, Jiří (referee) ; Štekl, Ivan (referee)
Semiconducting material CdTe/CdZnTe has a huge application potential in spectroscopic room temperature radiation detection due to its properties. Such detectors can be used in medical applications, homeland security and for monitoring of nuclear facilities. However, the final device quality is influenced by many parameters. One crucial stage in detector fabrication is the proper surface treatment. The detailed study of surface treatments and their effect on final detector device is reported. Another crucial fact is the polarization of the detector caused by high radiation fluxes which negatively affects the use of such devices. The polarization occurs by capturing the photogenerated holes at the deep levels inside the semiconductor. The possible detector depolarization by infrared illumination during the detector operation has been experimentally verified and the obtained results are shown in this thesis. For optimal technology of preparation, it is also necessary to develop the fast characterization method for prepared detectors. The last aim of the thesis is to study the resulting quality of prepared planar and co-planar detectors by transient-current-technique (TCT). TCT is an electro-optical method allowing to determine variety of transport properties of radiation detectors, such as internal electric...
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Study of the charge collection efficiency affected by metalization in Gamma and X- ray detectors
Pipek, Jindřich ; Belas, Eduard (advisor) ; Grill, Roman (referee)
In this thesis, the influence of metal contacts, prepared on CdZnTe-based semiconductor material by electroless deposition using aqueous or alcohol based solution, on the detection quality of Gamma and X-ray detectors. The quality of metal contacts is also affected by surface treatments. From single crystal of CdZnTe the testing detector was made. Electrical, spectroscopic and optical characterization techniques were used and their results were compared for two mentioned types of contacts. The aim was to show the possibility of preparing high quality metal contacts prepared from alcohol based solution of Gold(III) chloride. Alcohol based contacts are new method for preparing chemical contacts and promise different properties from standard chemical contacts prepared from aqueous based solution of Gold(III) chloride.
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Charge transport optical characterization in semiconductor radiation detectors
Ridzoňová, Katarína ; Belas, Eduard (advisor) ; Toušek, Jiří (referee)
Measurements of DC photocurrent-voltage characteristic, photocurrents spectral response and laser induced transient current technique enable investigation of surface recombination centers, bulk trap levels and distribution of the inner electric field. In the presented work, the n- type planar CdZnTe detectors with quasi Ohmic contacts were studied by above mentioned methods. It has been shown that in the case of strongly absorbed light under the DC regime of illumination not only surface recombination influences the detector's transport properties. The effect of the space charge, created as a consequence of carriers trapped by the impurity levels, must be taken into account. Therefore some new theoretical models were created in order to describe measured photocurrent-voltage dependencies. Obtained data were fitted with the new theory and the mobility and surface recombination velocity for electrons were determined.
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Influence of Deep Levels on Charge Transport in CdTe and CdZnTe
Dědič, Václav ; Franc, Jan (advisor) ; Oswald, Jiří (referee) ; Štekl, Ivan (referee)
CdTe and CdZnTe are promising materials for room temperature semiconductor X-ray and gamma ray detectors. The accumulation of a space charge at deep energy levels due to a band bending at contacts with Schottky barriers and due to trapped photogenerated charge may result in time dependent change of charge collection efficiency in CdTe and CdZnTe detectors known as polarization effect. This thesis is mainly focused on a study of electric field profiles in detectors under dark and high photon flux conditions simulating detector operation using crossed polarizers technique exploiting the electro-optic (Pockels) effect. It also deals with a study of deep levels responsible for the polarization and influence of contact metals on charge accumulation. Several experimental results are supported by theoretical simulations. The measurements were performed on three sets of samples equipped with different contact metals (Au, In) cut from three different n-type CdTe and CdZnTe materials. Energy levels were detected using methods based on the Pockels effect and discharge current measurements. Detailed study of internal electric field profiles has revealed a fundamental influence of near midgap energy levels related to crystal defects and contact metals on the polarization in semiconductor detectors under high radiation...
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Gamma and X- ray CdTe/CdZnTe detectors
Pekárek, Jakub
In the present work we studied an influence of different types of surface etching and surface passivation of high resistivity CdZnTe-based semiconductor detector material. The aim was to find the optimal conditions to improve the properties of metal-semiconductor contact. The main effort was to reduce the leakage current and thus get better X-ray and gamma-ray spectrum, ie to create a detector operating at room temperature based on this semiconductor material with sufficient energy resolution and the maximum charge collection efficiency. Individual surface treatments were characterized by volt-ampere characteristics, spectral analysis and by determination of the profile of the internal electric field.
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Influence of Deep Levels on Charge Transport in CdTe and CdZnTe
Dědič, Václav
CdTe and CdZnTe are promising materials for room temperature semiconductor X-ray and gamma ray detectors. The accumulation of a space charge at deep energy levels due to a band bending at contacts with Schottky barriers and due to trapped photogenerated charge may result in time dependent change of charge collection efficiency in CdTe and CdZnTe detectors known as polarization effect. This thesis is mainly focused on a study of electric field profiles in detectors under dark and high photon flux conditions simulating detector operation using crossed polarizers technique exploiting the electro-optic (Pockels) effect. It also deals with a study of deep levels responsible for the polarization and influence of contact metals on charge accumulation. Several experimental results are supported by theoretical simulations. The measurements were performed on three sets of samples equipped with different contact metals (Au, In) cut from three different n-type CdTe and CdZnTe materials. Energy levels were detected using methods based on the Pockels effect and discharge current measurements. Detailed study of internal electric field profiles has revealed a fundamental influence of near midgap energy levels related to crystal defects and contact metals on the polarization in semiconductor detectors under high radiation...
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Gamma and X- ray CdTe/CdZnTe detectors
Pekárek, Jakub ; Belas, Eduard (advisor) ; Doležal, Zdeněk (referee)
In the present work we studied an influence of different types of surface etching and surface passivation of high resistivity CdZnTe-based semiconductor detector material. The aim was to find the optimal conditions to improve the properties of metal-semiconductor contact. The main effort was to reduce the leakage current and thus get better X-ray and gamma-ray spectrum, ie to create a detector operating at room temperature based on this semiconductor material with sufficient energy resolution and the maximum charge collection efficiency. Individual surface treatments were characterized by volt-ampere characteristics, spectral analysis and by determination of the profile of the internal electric field.
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