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IR Laser CVD OF Nanodisperse Ge-Si-Sn Alloys Obtained by Dielectric Breakdown of GeH4/SiH4/SnH4 Mixtures
Křenek, Tomáš ; Bezdička, Petr ; Murafa, Nataliya ; Šubrt, Jan ; Pola, Josef
Nowadays, great attention is devoted to Ge-Si-Sn ternary system, because Si1-x-yGexSny provides the potential of band gap engineering and tuning of the optical properties. IR laser irradiation of equimolar gaseous GeH4 + SiH4 + SnH4 + Ar mixture results in simultaneous decomposition of all three compounds and it allows deposition of nanostructured solid film. Analysis of the films by FTIR and Raman spectroscopy, X-ray diffraction analysis and electron microscopy revealed crystalline nanobodies of pure beta-Sn and crystalline nanoobjects of Ge1-x-ySixSny embedded in an amorphous metastable Ge-Si-Sn alloy. This process allows co-decomposition of all silicon, germanium and tin hydrides which is caused by combination of infrared multiple photon dissociation of absorbing silane and currently proceeding LIDB. This is followed by intermixing/clustering of extruded metal atoms in the gas phase.
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