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Analysis and modification of thin layers using ion beams
Jonner, Jakub ; Lörinčík, Jan (referee) ; Bábor, Petr (advisor)
This diploma thesis deals with analysis and modification of thin layers using ion beams. The first part of this diploma thesis deals with phenomena accompanying ion beam bombardment of solid matter. The second part of this diploma thesis is concerned with Secondary Ion Mass Spectroscopy (SIMS) and Low Energy Ion Scattering (LAIS). This work convey some basic information about these two techniques and it also deals with some benefits result in their connection into parallel depth profiling mode (such as better depth resolution of the LEIS profile, quantification of the SIMS). These benefits are demonstrated on MoSi film measurement. Within the framework of this thesis a new UHV manipulator was designed. This new UHV manipulator is equipped with precise stepper UHV motor and since the proportions are smaller, the manipulation with a sample in a space limited UHV chamber is much more comfortable and more precise. The third part of this diploma thesis deals with ion-beam induced transformation of epitaxially grown Fe films with thickness of 22 monolayer (ML) and 44 ML on Cu(100) single crystal at room temperature. Metastable Fe films of 22 ML thickness were prepared in CO pressure and 44 ML Fe films were prepared by co-evaporation of Fe with Fe64Ni36 (invar). Structural changes are analyzed by scanning tunneling microscopy and low-energy electron diffraction. The aim of this thesis is to discuss the influence of the sputtering parameters such as ion dose and ion energy on the nucleation of bcc nanocrystals, their growth, final shape and size. The influence of different Ni concentration on stability of 44 ML thick Fe films is also discussed.
Ultrathin film analysis by SIMS and TOF-LEIS
Duda, Radek ; Lörinčík, Jan (referee) ; Bábor, Petr (advisor)
Study of possibilities of thin layers depth profiling by combined use of SIMS and ToF-LEIS methods.
Magnetic reconnection and its manifestations in solar flares and eruptions
Lörinčík, Juraj ; Dudík, Jaroslav (advisor) ; Masson, Sophie (referee) ; Varady, Michal (referee)
Solar flares and eruptions are manifestations of violent releases of magnetic energy from the solar atmosphere. They are powered by magnetic reconnection, a mechanism in which magnetic field lines change their connectivities to reach a lower-energetic state. Theoretical predictions regarding the generalised three-dimensional magnetic reconnection are imposed by the standard flare model in 3D. In this work we present the results of five peer-reviewed publications in which we focused on different predicted aspects of magnetic reconnection in 3D. We analyse evolution and morphology of seven eruptive flares, primarily using observations of the Atmospheric Imaging Assembly onboard the Solar Dynamics Observatory. In the first publication, (Lörinčík et al., 2019a), we interpreted variations of velocities of slipping flare kernels using the mapping norm of field line connectivity simulated via the model. In Lörinčík et al. (2019b) we showed that the observed conversion of filament strands to flare loops is a signature of the 'ar-rf' reconnection geometry between erupting flux rope and overlying coronal arcades. In another observation (Dudík, Lörinčík et al. (2019)), all constituents of this geometry were successfully identified together with the constituents of the 'rr-rf' geometry between two...
Effect of implantation of C, Si and Cu into ZrNb nanometric multilayers
Daghbouj, N. ; Karlík, M. ; Lorinčík, J. ; Polcar, T. ; Callisti, M. ; Havránek, Vladimír
Sputter-deposited Zr/Nb nanometric multilayer films with a periodicity (L) in the range from 6 to 167 nm were subjected to carbon, silicon and copper ion irradiation with low and high fluences at room temperature. The ion profiles, mechanical proprieties, and disordering behavior have been investigated by using a variety of experimental techniques (Secondary Ion Mass Spectrometry - SIMS, nanoindentation, X-ray diffraction - XRD, and scanning transmission electron microscopy - STEM). On the STEM bright field micrographs there is damage clearly visible on the surface side of the multilayer. Deeper, the most damaged and disordered zone, located close to the maximum ion concentration, was observed. The in-depth C and Si concentration profiles obtained from SIMS were not affected by the periodicity of the nanolayers. This is in accordance with SRIM simulations. XRD and electron diffraction analyses suggest a structural evolution in relation to L. After irradiation, Zr (0002) and Nb (110) reflexions overlap for L=6 nm. For the periodicity L > 6 nm the Zr (0002) peak is shifted to higher angles and Nb (110) peak is shifted to lower angles.
Analysis and modification of thin layers using ion beams
Jonner, Jakub ; Lörinčík, Jan (referee) ; Bábor, Petr (advisor)
This diploma thesis deals with analysis and modification of thin layers using ion beams. The first part of this diploma thesis deals with phenomena accompanying ion beam bombardment of solid matter. The second part of this diploma thesis is concerned with Secondary Ion Mass Spectroscopy (SIMS) and Low Energy Ion Scattering (LAIS). This work convey some basic information about these two techniques and it also deals with some benefits result in their connection into parallel depth profiling mode (such as better depth resolution of the LEIS profile, quantification of the SIMS). These benefits are demonstrated on MoSi film measurement. Within the framework of this thesis a new UHV manipulator was designed. This new UHV manipulator is equipped with precise stepper UHV motor and since the proportions are smaller, the manipulation with a sample in a space limited UHV chamber is much more comfortable and more precise. The third part of this diploma thesis deals with ion-beam induced transformation of epitaxially grown Fe films with thickness of 22 monolayer (ML) and 44 ML on Cu(100) single crystal at room temperature. Metastable Fe films of 22 ML thickness were prepared in CO pressure and 44 ML Fe films were prepared by co-evaporation of Fe with Fe64Ni36 (invar). Structural changes are analyzed by scanning tunneling microscopy and low-energy electron diffraction. The aim of this thesis is to discuss the influence of the sputtering parameters such as ion dose and ion energy on the nucleation of bcc nanocrystals, their growth, final shape and size. The influence of different Ni concentration on stability of 44 ML thick Fe films is also discussed.
Ultrathin film analysis by SIMS and TOF-LEIS
Duda, Radek ; Lörinčík, Jan (referee) ; Bábor, Petr (advisor)
Study of possibilities of thin layers depth profiling by combined use of SIMS and ToF-LEIS methods.
Films of Metal Nanoparticles Deposited on Semiconductors by Electrophoresis: Technology and Characterization
Žďánský, Karel ; Zavadil, Jiří ; Kacerovský, Pavel ; Kostka, František ; Lorinčík, Jan ; Černohorský, O. ; Fojtík, A. ; Müller, M. ; Kostejn, M.
Layers of nanoparticles in micelle enclosures were deposited on InP substrates by electrophoresis from isooctane colloid solutions containing Pd or Ag nanoparticles. The layers were investigated by SIMS, low-temperature photoluminescence spectroscopy and topography, absorption spectroscopy, Raman spectroscopy and sensitivity to hydrogen. Photoluminescence of InP was enhanced by the layers of Pd or Ag nanoparticles. Schottky barriers made on the n-type InP with layers containing Pd nanoparticles showed significant sensitivity to hydrogen in contrast to those containing Ag nanoparticles.
Effect of silicon nitride layers on the minority carrier diffusion length in c-Si wafers
Toušek, J. ; Toušková, J. ; Poruba, A. ; Bařinka, R. ; Hlídek, P. ; Lorinčík, Jan
The main purpose of this work was the comparison of the silicon nitride prepared by the LP CVD and by the MW PE CVD from silane and ammonia gases with respect to the possibility of passivation c-Si surface layer. The properties of the silicon nitride films were studied by the surface photovoltage (SPV), FTIR and SIMS methods. The average value of the diffusion length of minority carriers in the Si samples with the LP CVD nitride was shorter and dependent on the location in the reactor.

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1 Lörinčík, Juraj
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