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Non-Linear Electro-Ultrasonic Spectroscopy of Resistive Materials
Tofel, Pavel ; Koktavý, Bohumil (referee) ; Smulko, Janusz (referee) ; Šikula, Josef (advisor)
Elektro-ultrazvuková spektroskopie je založena na interakci dvou signálů, elektrického střídavého signálu s frekvencí fE a ultrazvukového signálu s frekvencí fU. Ultrazvukový signál mění vzdálenost mezi vodivými zrny ve vzorku a tím mění jeho celkový elektrický odpor R. Změna odporu R je proměnná s frekvencí ultrazvukového signálu fU. Vzorek, který obsahuje mnoho defektů ve své struktuře, vykazuje vysokou změnu odporu R v porovnání se vzorkem bez defektů při stejné hodnotě ultrazvukového a elektrického signálu. V disertační práci je popsána elektro-ultrazvuková metoda na tlustovrstvých rezistorech, hořčíkových slitinách, monokrystalech Si a CdTe, varistorech a také jeden z prvních pokusů aplikace elektro-ultrazvukové spektroskopie na horninové vzorky a tak diagnostikovat jejich stav poškození. V našem případě byl proměřen vzorek žuly. Jelikož se jedná o nedestruktivní metodu testování, tak má tato metoda velmi perspektivní budoucnost. Tato metoda je citlivá na všechny defekty ve vzorku. Její výhodou je, že se měří velikost signálu ne frekvenci danou rozdílem nebo součtem budících frekvencí fE a fU a tím se dá dosáhnout vysoké citlivosti. V mém případě byl vždy měřen signál na rozdílové frekvenci fi = fE-fU.
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Analysis of the operating costs of the machining process
Šikula, Josef ; Osička, Karel (referee) ; Prokop, Jaroslav (advisor)
This master’s thesis deals with the operating production cost in machining process and further optimalization. Individual costs items which are related to machining process are specified. Attention is paid to the time consumption of individual machining methods. The aim of the thesis is to find an optimal combination of cutting speed and durability in order to meet the minimum cost criteria and maximum productivity. The calculations are used for turning the outer cylindrical surface and the face surfaces at a constant cutting speed. The work is accompanied by tables and calculations in Microsoft Excel.
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Electronic Noise of Piezoceramic Sensors of Acoustic Emission
Majzner, Jiří ; Šikula, Josef (advisor)
In our work the analysis of electrical and noise characteristics of piezoceramic acoustic emission sensors is accomplished. The objective of our work is to analyze and optimize the signal-to-noise ratio. The starting point is the explanation of the noise origin in the acoustic emission sensors. The voltage fluctuation is caused by the dipole vibrations due to their interaction with phonons. The frequencies of dipoles vibrations have statistical distribution and the total energy of these vibrations is proportional to the temperature. The statistical distribution of vibration frequencies leads to the origination of the 1/f type noise spectral density. The interaction between the phonons and electric dipoles is characterized by the imaginary part of susceptibility which is related to the transformation of electric energy to the mechanical energy of vibrations. This process is irreversible and this forms important theoretical question whether the Callen-Welton fluctuation dissipation theorem could be used for the description of fluctuation processes in the acoustic emission sensors. In our work the influence of the real and imaginary part of the susceptibility on the noise and electrical characteristics is solved, the dissipation of electrical energy characterized by the imaginary part of susceptibility is described and the connection between the imaginary part of susceptibility and the noise power spectral density is discussed. Due to the fact that these processes originate in the interaction between electrical dipoles and phonons, we give account of the temperature dependencies of equivalent series resistance and power spectral density of noise voltage, respectively. Piezoceramics stiffness contribute significantly to the resonance creation hence the pressure influence on the sensor noise characteristics was studied. The signal-to-noise ration improvement requires the piezoceramic sample diameter increase for its constant thickness. The ratio of the noise spectral density and sensitivity is independent on the sample thickness. The noise voltage is proportional to the square root of spectral density and frequency bandwidth that is why for the high signal-to-noise ratio it is necessary to minimize the signal amplifier frequency bandwidth. The noise voltage power spectral density increases with the temperature while the activation energy is 20 meV for the temperature 300 K, and 80 meV for the temperature 400 K, respectively. The power spectral density of planar oscillations decreases with increasing pressure and simultaneously the resonant frequency increases. The bandwidth of the normalized spectral density increases with the pressure for the planar oscillations while is invariable for the thickness oscillations. For the examination of the influence of the piezoceramic electrical polarization on the electrical and noise characteristics the experimental study of these dependencies was accomplished for samples without polarization, and samples polarized by electric field EP = 500V/mm and 1000V/mm, respectively. The samples without polarization show the noise of 1/f type only which corresponds to the Callen-Welton fluctuation dissipation theorem. The polarization leads to the generation of planar and thickness oscillations and the power spectral density of voltage fluctuation on the electrodes is proportional to the temperature, and inversely proportional to the imaginary part of permittivity, to the sample area S, and the frequency f.
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Properties of point defects in CdTe at temperatures of 300 - 600 K
Korcsmáros, Gabriel ; Moravec, Pavel (advisor) ; Šikula, Josef (referee) ; Toušková, Jana (referee)
The thermal stability of p-type CdTe crystals by using conductivity and Hall-effect measurements have been studied at room and slightly increased temperatures. It was observed that thermal changes often implicate an anomalous behavior of the hole density characterized by reversible decrease/increase in a heating/cooling regime. This anomaly was explained by a transfer of fast diffusing donors between Te inclusions and the bulk of the sample. Sodium and potassium were determined by the Secondary Ion Mass Spectroscopy (SIMS) as the most probable diffusing species. To verify this behavior samples were also treated in saturated NaCl solution for different time intervals in order to examine the influence of the oxide layer and sodium on the surface of the sample. To determine the structure of the surface the sample was characterized by ellipsometric and X-ray photoelectron spectroscopy (XPS) and SIMS. Very low determined diffusion coefficient of Na was explained by trapping of Na in Cd sublattice
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Photoelectric transport in high resistivity CdTe for gamma ray detectors
Dědič, Václav ; Franc, Jan (advisor) ; Šikula, Josef (referee)
CdTe semiconductor is a good material for the construction of X-ray and gamma ray detectors. Its physical properties are strongly influenced by an existence of deep levels in the forbidden band. This thesis deals with an influence of deep levels to the photoelectric transport in high resistivity CdTe. Experimental part of this thesis consits of measurement of slopes of Lux-Ampere characteristics of variously doped CdTe samples depended on voltage and energy of excitation. Gradients of measured guidelines of Lux-Ampere characteristics show strong dependency on an electric charge accumulated on deep levels. This thesis also contains numerical models of photoconductivity for various parameters of material.
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Properties of point defects in CdTe at temperatures of 300 - 600 K
Korcsmáros, Gabriel ; Moravec, Pavel (advisor) ; Šikula, Josef (referee) ; Toušková, Jana (referee)
The thermal stability of p-type CdTe crystals by using conductivity and Hall-effect measurements have been studied at room and slightly increased temperatures. It was observed that thermal changes often implicate an anomalous behavior of the hole density characterized by reversible decrease/increase in a heating/cooling regime. This anomaly was explained by a transfer of fast diffusing donors between Te inclusions and the bulk of the sample. Sodium and potassium were determined by the Secondary Ion Mass Spectroscopy (SIMS) as the most probable diffusing species. To verify this behavior samples were also treated in saturated NaCl solution for different time intervals in order to examine the influence of the oxide layer and sodium on the surface of the sample. To determine the structure of the surface the sample was characterized by ellipsometric and X-ray photoelectron spectroscopy (XPS) and SIMS. Very low determined diffusion coefficient of Na was explained by trapping of Na in Cd sublattice
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Analysis of the operating costs of the machining process
Šikula, Josef ; Osička, Karel (referee) ; Prokop, Jaroslav (advisor)
This master’s thesis deals with the operating production cost in machining process and further optimalization. Individual costs items which are related to machining process are specified. Attention is paid to the time consumption of individual machining methods. The aim of the thesis is to find an optimal combination of cutting speed and durability in order to meet the minimum cost criteria and maximum productivity. The calculations are used for turning the outer cylindrical surface and the face surfaces at a constant cutting speed. The work is accompanied by tables and calculations in Microsoft Excel.
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Defects limiting charge collection in semiinsulated CdZnTe
Zajac, Vít ; Franc, Jan (advisor) ; Šikula, Josef (referee)
Title: Defects limiting charge collection in semiinsulated CdZnTe Author: Vít Zajac Department: Institute of Physics of Charles University Supervisor: doc. Ing. Jan Franc, DrSc., Institute of Physics of Charles University Abstract: We achieved to detect photoluminescence transitions deep in the band gap in 4 samples cut from 2 different crystals of semiinsulating Cd1-xZnxTe (x = 0,02 - 0,18) in a row of points along the growth axis. The spectral peaks give evidence of the presence of deep levels in the sample and the intensity of the photoluminescence peaks is to a certain extent proportional to the concentration of these levels. A comparison between resistivity and photoconductivity that were measured by a contact-less method showed that the change of photoluminescence intensity of deep levels does not bring about an unambigous change of neither resistivity nor photoconductivity. Correlation analysis of resistivity and photoconductivity of 6 samples from 4 different crystals confirmed the following model: A shift of the Fermi level within the band gap induced by a change of donor-acceptor compensation is accompanied by an unambigous change of resistivity and results in a change in occupation of the deep levels. This causes a change in the photoconductivity of the crystal because the occupation factor of...
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