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Selective growth of GaN on SiN
Hulva, Jan ; Kolíbal, Miroslav (referee) ; Mach, Jindřich (advisor)
This bachelor's thesis deals with the selective growth of gallium and gallium nitride on silicon nitride (SiN) substrates. Thin silicon nitride layers are deposited on silicon substrates. Oxide structures are prepared by the local anodic oxidation method (LAO) on SiN substrates. These surfaces can be editionally modified by etching in hydrofluoric acid. Modified substrates are used for the deposition of gallium or gallium nitride under ultra-high vacuum conditions. Consequently, ordering of deposited material was studied in areas modified by LAO. Chemical state of layers is studied by X-ray photoelectron spectroscopy. Morphology of surfaces is measured by the atomic force microscope (AFM).
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Possibilities of preparing nanoelectronic devices on graphene using AFM
Lipták, Daniel ; Čech, Vladimír (referee) ; Bartošík, Miroslav (advisor)
V tejto diplomovej práci sme sa zamerali na štúdiu a prípravu nano-štruktúr na graféne pomocou lokálnej anodickej oxidácie. Naša pozornosť bola venovaná izolačným schopnostiam oxidovaného grafénu, ktorý bol študovaný pomocou mapovania povrchového napätia, využívaním sondovej mikroskopie Kelvinovej sily, a súčasným meraním toku nosičov nábojov. Získané výsledky poukazujú na zdvojnásobnenie odporu pri čiarovom oxidovom prerušení. Ku koncu, nano-zúženie s mikrometrovými rozmermi bolo vyrobené a študované pod rôznymi vlhkosťami, v rozmedzí 3% až 60%.
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Selective growth of GaN on SiN
Hulva, Jan ; Kolíbal, Miroslav (referee) ; Mach, Jindřich (advisor)
This bachelor's thesis deals with the selective growth of gallium and gallium nitride on silicon nitride (SiN) substrates. Thin silicon nitride layers are deposited on silicon substrates. Oxide structures are prepared by the local anodic oxidation method (LAO) on SiN substrates. These surfaces can be editionally modified by etching in hydrofluoric acid. Modified substrates are used for the deposition of gallium or gallium nitride under ultra-high vacuum conditions. Consequently, ordering of deposited material was studied in areas modified by LAO. Chemical state of layers is studied by X-ray photoelectron spectroscopy. Morphology of surfaces is measured by the atomic force microscope (AFM).
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