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Scanning Very Low Energy Electron Microscopy
Müllerová, Ilona ; Hovorka, Miloš ; Mikmeková, Šárka ; Pokorná, Zuzana ; Mikmeková, Eliška ; Frank, Luděk
Recent developments in applications of the scanning very low energy electron microscopy in selected branches of materials science are reviewed. The examples include visualization of grains in conductive polycrystals including ultrafine grained metals, identification of the local crystal orientation upon reflectance of very slow electrons, transmission mode with ultrathin free-standing films including graphene, acquisition of a quantitative dopant contrast in semiconductors, and examination of thin surface coverages.
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Imaging of thermal treated thin films on silicon substrate in the scanning low energy electron microscope
Zobačová, Jitka ; Mikmeková, Šárka ; Polčák, J. ; Frank, Luděk
Structure of thin films usually requires to be examined on microscopic level. The research topics like growth and stability of thin films, phase transitions and separation, crystallization, diffusion and defect formation has a need for LEED or XPS as techniques adequate for investigation of atomic transport processes on short length scales. The low energy electron microscopy is a complementary solution for imaging of samples with special concern for knowledge of surface physics and material science. In this contribution the microscopic examination of as-deposited and thermal treated thin films on Si substrates is performed.
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Prospects of the scanning low energy electron microscopy in materials science
Mikmeková, Šárka ; Hovorka, Miloš ; Konvalina, Ivo ; Müllerová, Ilona ; Frank, Luděk
The use of the scanning low energy electron microscopy (SLEEM) has been slowly making its way into the field of materials science, hampered not by limitations in the technique but rather by the relative scarcity of these instruments in research institutes and laboratories. Various techniques exist which are capable of studying the material microstructure, with the scanning electron microscopy (SEM), (scanning) transmission microscopy ((S)TEM) and focused ion beam (FIB) microscopy being perhaps the most known. A specific way to visualizing the microstructure of materials at high spatial resolution, to achieve a high contrast between grains in polycrystals and very fast data acquisition is to use the cathode lens (CL) mode in SEM. The CL mode in the SEM enables us to detect slow but not only slow, high angle scattered electrons that carry mainly crystallographic contrast based on the electron channeling, mostly in the Mott scattering angular range.
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Orientation of Grains in the Al-Mg-Si-Mn Alloy by Scanning Low Energy Electron Microscopy
Müllerová, Ilona ; Matsuda, K. ; Horiba, K. ; Mikmeková, Šárka ; Frank, Luděk
Electron Backscatter Diffraction (EBSD) is a technique allowing the crystallographic infomiation to be obtained from samples in the scanning electron microscope (SEM). The main disadvantages of this method include the specimen tilt by 70°, requiring to operate at large working distances and hence with reduced lateral resolution, and a long acquisition time needed to obtain the full infomnation about grain orientations. However, the crystal orientation can be recognized upon energy dependence of the electron reflectance in the very low energy range. Information can be acquired at a high lateral resolution, high contrast and short acquisition time in a dedicated SEM equipped by the cathode lens.
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