|
|
Experimental control of Ce3+ concentration in ceria based model catalysts
Stetsovych, Vitalii ; Mysliveček, Josef (advisor) ; Lykhach, Yaroslava (referee) ; Rezek, Bohuslav (referee)
Concentration of Ce3+ is one of the most important parameters that influence the reactivity of ceria based catalyst. In this work we examine different experimental approaches for controlling Ce3+ concentration in cerium oxide model catalyst systems such as: i) influencing the stoichiometry of ceria, ii) introducing high valence doping agent, and iii) growing ultra thin ceria films with a strong metal substrate interaction. Structure, morphology and chemical state of prepared reduced ceria based systems were examined by means of surface science techniques: scanning tunneling microscopy, low-energy electron diffraction and X-ray photoelectron spectroscopy. In the present work an original method of ceria film reduction was introduced that allows stepwise control on stoichiometry and degree of film reduction (i). Further we introduce preparation procedures for well-ordered tungsten doped ceria model system (ii) and for the high quality 2D ultrathin ceria system on Cu (1 1 1) (iii). Preparation methods and model systems introduced in this work incorporate different physicochemical principles of Ce3+ induction and provide a variety of model systems useful for examining different effects that diversely prepared Ce3+ ions have on the activity of the catalyst.
|
|
|
Structuring and study of electronic and chemical properties of semiconductor surfaces
Verveniotis, Elisseos ; Rezek, Bohuslav (advisor) ; Bartošík, Miroslav (referee) ; Klapetek, Petr (referee)
of thesis Semiconductor materials play a crucial role in modern society as they have become integral parts of our daily life through personal computers, mobile phones, medical implants, solar panels and a plethora of other commercially available electronic devices. The semiconductor industry has been relying predominantly on silicon so far and will continue to do so for a few more years, until the material limits for miniaturization and device engineering are reached. Fortunately, worldwide research has already demonstrated that there are materials exhibiting superior mechanical, electronic, and optical properties and which can thus replace or at least complement silicon. This represents a very important step towards satisfying the ever rising global demand for smaller, faster, energy-efficient and cheaper electronic devices. To that end, nowadays research is focused on fabrication and characterization of diverse materials and nanostructures which are aimed to be integral in electronic devices. Due to the miniaturization, it is essential that the electronic, structural and chemical characterization and modification of those novel materials and structures is performed on the microscopic scale. The relatively young but nevertheless rapidly expanding and exciting field of nanoscience and...
|
|
| |
|
|
Semiconductor nanowire growth utilizing alloyed catalyst
Musálek, Tomáš ; Rezek, Bohuslav (referee) ; Kolíbal, Miroslav (advisor)
This master's thesis deals with growth of germanium nanowires using different catalyst particles. The emphasis is mainly layed on fabrication of specific alloyed catalyst consisting of (AgGa). In the first part of the thesis are mentioned two most common concepts of nanowire growth and the importance of phase diagrams for their interpretation. Method for production of alloyed catalyst is demonstrated and experiments focused on the growth of germanium nanowires using this catalyst were performed. Moreover, method for modification of germanium surface via anisotropic etching is demonstrated as well. Such etched structures are suitable for nanowire growth with the help of different kinds of catalyst particles or for the growth of nanowires made of various materials.
|
|
|
Application of Scanning Probe Microscopy for the Study of Ultrathin Films and Nanostructures
Neuman, Jan ; Rezek, Bohuslav (referee) ; Mašláň, Miroslav (referee) ; Šikola, Tomáš (advisor)
Dizertační práce je obecně zaměřena na problematiku mikroskopie atomárních sil (AFM), a to jak vývoje částí těchto mikroskopů, tak i jejich obecnému využití v oblasti výzkumu povrchů, ultratenkých vrstev a nanostruktur. Na Ústavu fyzikálního inženýrství jsou vyvíjena zařízení umožňující aplikovat uvedenou mikroskopickou metodu. V těchto mikroskopech jsou využívány piezoelektrické motory pro zajištění pohybu vzorku a ladicích zrcátek v optickém detekčním systému. Práce se v části věnované vývoji AFM zabývá studiem parametrů řídicích pulzů za účelem optimalizace funkce těchto komponent. Měřením vlivu tvaru pulzů a opakovací frekvence byl jejich pohyb optimalizován z hlediska stability a rychlosti posuvu. V části věnované výzkumu povrchů byly experimentálně zkoumány morfologické změny ultratenkých vrstev zlata na povrchu oxidu křemičitého za zvýšených teplot. Bylo zjištěno, že vhodná povrchová modifikace způsobuje vznik preferenčních trhlin ve vrstvě zlata. Řízeným rozdělením polykrystalické vrstvy na oddělené oblasti je možné významně ovlivnit proces tvorby ostrůvků zlata vznikajících při žíhání. S využitím metod elektronové litografie je možná příprava uspořádaných polí zlatých ostrůvků o velikostech 50 – 400 nm. Dále bylo ukázáno, že zvýšením teploty žíhání na 1000 °C dochází k postupnému zanořování ostrůvků zlata do povrchu. Tento jev je pravděpodobně způsoben přesunem oxidu křemičitého z oblasti pod zlatým ostrůvkem do těsného okolí vzniklého kráteru, kde tvoří tzv. límec. V těchto studiích vedle metody AFM byla s výhodou používána rovněž elektronová mikroskopie (SEM).
|
|
|
The preparation and characterisation of electrical properties of graphene CVD monocrystals
Hulva, Jan ; Rezek, Bohuslav (referee) ; Mach, Jindřich (advisor)
Chemická depozice grafenu z plynné fáze (CVD) je metoda schopná produkovat grafenové monovrstvy velkých velkých rozměrů. Část experimentální práce v rámci této diplomové práce je zaměřena na depozici a analýzu grafenových monokrys- talů připravených metodou CVD na měděném substrátu. Pro analýu grafénových domén je použito technik optické mikroskopie, elektronové mikroskopie, mikroskopie atomárních sil a Ramanovy spektroskopie. Úkolem další části je studium defektů po- zorovaných na mědi po depozici grafenu pomocí energiově disperzní rentgenové spek- troskopie. Množství těchto defektů bylo odstraněno úpravou depozičního systému ačkoliv takto nebylo dosaženo eliminování všech typů defektů. Poslední část této práce se zabývá měření elektro-transportních vlastností grafenu. Výsledky této části zahrnují měření ve vakuu se zapojeným hradlovým napětím a měření při nízkých teplotách v magnetickém poli.
|
|
|
Ordered and disordered arrays of colloidal nanoparticles for biomolecule detection
Ligmajer, Filip ; Rezek, Bohuslav (referee) ; Kolíbal, Miroslav (advisor)
This thesis deals with guided self-assembly of gold nanoparticles from their colloidal solutions onto silicon substrates and possible employment of nanoparticles for detection of biomolecules. It was found that by adjustment of solution pH and surface chemistry modification by means of electron beam irradiation it is possible to facilitate nanoparticle deposition to patterns with almost single particle precision. Spectroscopic ellipsometry was then employed in analysis of self-assembled layers of nanoparticles and its combination with a theory of effective medium approximation has proven the ability to assess nanoparticle dimensions and volume fractions. By experiments with thiolated oligonucleotides it has been shown that using ellipsometry one can detect even with very subtle changes in nanoparticle environment caused by biomolecules, thus promising its possible use in the field of biodetection.
|
|
|
Application of KPM on Graphene/Si Surface Modified by FIB method
Konečný, Martin ; Rezek, Bohuslav (referee) ; Bartošík, Miroslav (advisor)
This diploma thesis is focused on the application of Kelvin probe microscopy on graphene fabricated by the chemical vapour deposition. The theoretical part of the thesis deals with basic principles of Kelvin force microscopy and focus ion beam. Further, basic properties of graphene and its possible fabrication methods are discussed. The experimental part is focused on the surface potential measurements on graphene membranes fabricated on the substrate modified by focus ion beam. Finally, atomic force microscope lithography was used for nanopatterning of graphene sheets.
|
|
|
Application of metallic materials for selective growth
Němeček, Tomáš ; Rezek, Bohuslav (referee) ; Čechal, Jan (advisor)
The Si(100) surface and Ga surface phases up to 1 ML on their oxidation have been studied by XPS and LEED. The selective growth of Ga on the SiO2/Si structures fabricated by EBL has been analyzed using SEM and AFM methods. It was proved that Ga clusters grow in structures beside the oxide. The structure of alumina on Ni3Al(111) and NiAl(110) substrates was fully determined by combining the results of STM measurements and DFT simulations. It was determined the alumina/NiAl(110) does not form a suitable template for ordered Fe and Co clusters growth. However, the next research confirmed the alumina/Ni3Al(111) forms template appropriate to clusters growth purpose.
|
|
|
Fabrication of 3D diamond membranes for microfluidic systems
Varga, Marián ; Babchenko, Oleg ; Bauerová, Pavla ; Hruška, Karel ; Jurka, Vlastimil ; Kromka, Alexander ; Rezek, Bohuslav
Perfusion of cell medium, especially in microfluidic devices, can provide in-vivo-like conditions for cell cultures. The most recent demand on such systems is to include electronically active artificial cell support for in-situ monitoring. Diamond thin films exhibit advantageous combination of physical, mechanical, chemical, biocompatible and electronic properties for this purpose. In this work we explore two strategies for fabrication of self-standing three-dimensional nanocrystalline diamond membrane for implementation in microfluidic invivo like experiments: i) nucleation and chemical vapour deposition (CVD) growth of diamond on porous 3D carbon foam (with 80 pores per inch) and ii) selective diamond growth predefined by photolithographic processing using copper grid mask. The morphology and material quality of the fabricated membranes are characterized by scanning electron microscopy and Raman spectroscopy.
|
guest ::
