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SPICE model of LDMOS structure
Loginov, Dmitrii ; Biolek, Dalibor (oponent) ; Hejátková, Edita (vedoucí práce)
In this bachelor thesis, comparison of Lateral Double-diffused MOS against conventional MOS structure is presented. Anomalous effects, issues that this high-voltage device brings to modeling and characterization, and theoretical analysis of this type of structure are described in the first chapter. Next part of this project is focused on possible approaches in characterization that is used in the semiconductor industry, of LDMOS. The BSIM methodology, described in chapter two, has been chosen to create a DC and CV model of an n-type LDMOS device measured at the ON semiconductor laboratory. The steps of characterization, such as measurement, tuning of characteristics to an optimized BSIM4 parameter set are reported in the last chapters of this work.
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SPICE model of LDMOS structure
Loginov, Dmitrii ; Biolek, Dalibor (oponent) ; Hejátková, Edita (vedoucí práce)
In this bachelor thesis, comparison of Lateral Double-diffused MOS against conventional MOS structure is presented. Anomalous effects, issues that this high-voltage device brings to modeling and characterization, and theoretical analysis of this type of structure are described in the first chapter. Next part of this project is focused on possible approaches in characterization that is used in the semiconductor industry, of LDMOS. The BSIM methodology, described in chapter two, has been chosen to create a DC and CV model of an n-type LDMOS device measured at the ON semiconductor laboratory. The steps of characterization, such as measurement, tuning of characteristics to an optimized BSIM4 parameter set are reported in the last chapters of this work.
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