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Analysis and modification of thin layers using ion beams
Jonner, Jakub ; Lörinčík, Jan (referee) ; Bábor, Petr (advisor)
This diploma thesis deals with analysis and modification of thin layers using ion beams. The first part of this diploma thesis deals with phenomena accompanying ion beam bombardment of solid matter. The second part of this diploma thesis is concerned with Secondary Ion Mass Spectroscopy (SIMS) and Low Energy Ion Scattering (LAIS). This work convey some basic information about these two techniques and it also deals with some benefits result in their connection into parallel depth profiling mode (such as better depth resolution of the LEIS profile, quantification of the SIMS). These benefits are demonstrated on MoSi film measurement. Within the framework of this thesis a new UHV manipulator was designed. This new UHV manipulator is equipped with precise stepper UHV motor and since the proportions are smaller, the manipulation with a sample in a space limited UHV chamber is much more comfortable and more precise. The third part of this diploma thesis deals with ion-beam induced transformation of epitaxially grown Fe films with thickness of 22 monolayer (ML) and 44 ML on Cu(100) single crystal at room temperature. Metastable Fe films of 22 ML thickness were prepared in CO pressure and 44 ML Fe films were prepared by co-evaporation of Fe with Fe64Ni36 (invar). Structural changes are analyzed by scanning tunneling microscopy and low-energy electron diffraction. The aim of this thesis is to discuss the influence of the sputtering parameters such as ion dose and ion energy on the nucleation of bcc nanocrystals, their growth, final shape and size. The influence of different Ni concentration on stability of 44 ML thick Fe films is also discussed.
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Analysis and modification of thin layers using ion beams
Jonner, Jakub ; Lörinčík, Jan (referee) ; Bábor, Petr (advisor)
This diploma thesis deals with analysis and modification of thin layers using ion beams. The first part of this diploma thesis deals with phenomena accompanying ion beam bombardment of solid matter. The second part of this diploma thesis is concerned with Secondary Ion Mass Spectroscopy (SIMS) and Low Energy Ion Scattering (LAIS). This work convey some basic information about these two techniques and it also deals with some benefits result in their connection into parallel depth profiling mode (such as better depth resolution of the LEIS profile, quantification of the SIMS). These benefits are demonstrated on MoSi film measurement. Within the framework of this thesis a new UHV manipulator was designed. This new UHV manipulator is equipped with precise stepper UHV motor and since the proportions are smaller, the manipulation with a sample in a space limited UHV chamber is much more comfortable and more precise. The third part of this diploma thesis deals with ion-beam induced transformation of epitaxially grown Fe films with thickness of 22 monolayer (ML) and 44 ML on Cu(100) single crystal at room temperature. Metastable Fe films of 22 ML thickness were prepared in CO pressure and 44 ML Fe films were prepared by co-evaporation of Fe with Fe64Ni36 (invar). Structural changes are analyzed by scanning tunneling microscopy and low-energy electron diffraction. The aim of this thesis is to discuss the influence of the sputtering parameters such as ion dose and ion energy on the nucleation of bcc nanocrystals, their growth, final shape and size. The influence of different Ni concentration on stability of 44 ML thick Fe films is also discussed.
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Films of Metal Nanoparticles Deposited on Semiconductors by Electrophoresis: Technology and Characterization
Žďánský, Karel ; Zavadil, Jiří ; Kacerovský, Pavel ; Kostka, František ; Lorinčík, Jan ; Černohorský, O. ; Fojtík, A. ; Müller, M. ; Kostejn, M.
Layers of nanoparticles in micelle enclosures were deposited on InP substrates by electrophoresis from isooctane colloid solutions containing Pd or Ag nanoparticles. The layers were investigated by SIMS, low-temperature photoluminescence spectroscopy and topography, absorption spectroscopy, Raman spectroscopy and sensitivity to hydrogen. Photoluminescence of InP was enhanced by the layers of Pd or Ag nanoparticles. Schottky barriers made on the n-type InP with layers containing Pd nanoparticles showed significant sensitivity to hydrogen in contrast to those containing Ag nanoparticles.
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