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	The contrast curves determination for e-beam writer with Gaussian beam Šuľan, Dušan ; Horáček,, Miroslav (referee) ; Krátký, Stanislav (advisor) This work deals with technological process of structures creating by using of electron beam lithography. The main focus of the work is contrast curves of PMMA resist determination for electron beam lithography system Vistec EBPG 5000+ ES. Contrast curves are determined for different developers, developing times and the depths of resist. Sensitivity and the contrast of resist are determined from these contrast curves for each resist-developer system. Sensitivity curves are applied to the proximity effect correction on real structures, specifically the periodic diffraction gratings and then they are evaluated. Detailed record
	The contrast curves determination for e-beam writer with Gaussian beam Šuľan, Dušan ; Horáček,, Miroslav (referee) ; Krátký, Stanislav (advisor) This work deals with technological process of structures creating by using of electron beam lithography. The main focus of the work is contrast curves of PMMA resist determination for electron beam lithography system Vistec EBPG 5000+ ES. Contrast curves are determined for different developers, developing times and the depths of resist. Sensitivity and the contrast of resist are determined from these contrast curves for each resist-developer system. Sensitivity curves are applied to the proximity effect correction on real structures, specifically the periodic diffraction gratings and then they are evaluated. Detailed record
	Reverse recovery in power integrated circuits Šuľan, Dušan ; Žák, Jaromír (referee) ; Boušek, Jaroslav (advisor) Předkládaná práce se zabývá parametrem “Reverse Recovery Time“ u polovodičových prvků a jeho vlivem na typické spínací obvody. V první části práce je objasněno co je “Reverse Recovery Time“ a jeho jednotlivé části. V další sekci je popsána jeho fyzikální podstata. Na konci teoretická části je rozebrán jeho efekt na spínací ztráty a doporučená metoda měření tohto parametru . Praktická část práce je zaměřena na simulace Dpdr45nres45 v prostředích Cadence a TCAD. Poslední část se zabývá návrhem obvodu na měření u reálných diod a samotným měřením diod a tranzistorů. Detailed record

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