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Design of the carbon atomic source for deposition of graphene in UHV
Čalkovský, Vojtěch ; Bábor, Petr (referee) ; Mach, Jindřich (advisor)
This bachelor's thesis deals with the design of the atomic carbon source for deposition of graphene layers in UHV conditions. In the first part are briefly described the problems of epitaxial growth, the theory of atomic beams and theory of sublimation. The second part is aimed on graphene description, namely on his properties and on the growth of graphene layers, especially by molecular beam epitaxy. The third part contains brief description of detection and analysis methods of carbon atomic beams. In the practical part of this bachelor's thesis the design and the numeric calculations were made in Simion 8.0 and EOD program. Afterwards the atomic carbon source was constructed. In the conclusion are discussed the obtained results.
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GaN deposition on a tungsten substrate
Pikna, Štěpán ; Piastek, Jakub (referee) ; Čalkovský, Vojtěch (advisor)
This bachelor thesis is focused on deposition of GaN nanocrystals on the etched tungsten tips. Motivation was to prepare these GaN structures on the Schottky cathode made by company ThermoFisher Scientific and measure its field emission. In the theoretical part of the thesis GaN and tungsten field emission properties are introduced. The experimental part begins with tungsten tip etching optimalization, where the right values for best tips are temperature 20 °C, depth of the tip 2,5 mm and solution NaOH used. Further the gallium structures were prepared on these tips using molecular beam epitaxy (MBE). The right temperature to prepare GaN nanocrystals was determined as 200 °C. The deposition of gallium was set to 2 hours and following nitridation was 3 hours. Finally, the field emission from GaN prepared on copper foil with graphene was measured and compared with other experiments.
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Deposition and characterization of GaN nanocrystals with a metal core
Čalkovský, Vojtěch ; Čech, Vladimír (referee) ; Mach, Jindřich (advisor)
Tato diplomova prace se zabyva prpravou a charakterizac GaN nanokrystalu s kovovym jadrem. V teoreticke casti teto prace je predstaven material GaN se svymi vlastnos- tmi a aplikacemi. Dale jsou uvedeny substraty pro rust a jednotlive mechanismy rustu GaN nanokrystalu. V dalsm jsou popsany kovove nanocastice a jejich opticke vlastnosti umoznujc zesilovan fotoluminiscence na zaklade interakce plasmonu a GaN. Experi- mentaln cast se zabyva prpravou GaN nanokrystalu s Ag jadrem ve ctyrech krocch. Prvne jsou Ag nanocastice naneseny na substrat Si(111). Nasledne se nechaj zoxidovat. Tretm krokem je depozice Ga a poslednm je nitridace. Jednotlive kroky byly opti- malizovany a analyzovany ruznymi metodami, jako je XPS, SEM, fotoluminiscence a Ramanova spektroskopie.
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GaN deposition on a tungsten substrate
Pikna, Štěpán ; Piastek, Jakub (referee) ; Čalkovský, Vojtěch (advisor)
This bachelor thesis is focused on deposition of GaN nanocrystals on the etched tungsten tips. Motivation was to prepare these GaN structures on the Schottky cathode made by company ThermoFisher Scientific and measure its field emission. In the theoretical part of the thesis GaN and tungsten field emission properties are introduced. The experimental part begins with tungsten tip etching optimalization, where the right values for best tips are temperature 20 °C, depth of the tip 2,5 mm and solution NaOH used. Further the gallium structures were prepared on these tips using molecular beam epitaxy (MBE). The right temperature to prepare GaN nanocrystals was determined as 200 °C. The deposition of gallium was set to 2 hours and following nitridation was 3 hours. Finally, the field emission from GaN prepared on copper foil with graphene was measured and compared with other experiments.
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Deposition and characterization of GaN nanocrystals with a metal core
Čalkovský, Vojtěch ; Čech, Vladimír (referee) ; Mach, Jindřich (advisor)
Tato diplomova prace se zabyva prpravou a charakterizac GaN nanokrystalu s kovovym jadrem. V teoreticke casti teto prace je predstaven material GaN se svymi vlastnos- tmi a aplikacemi. Dale jsou uvedeny substraty pro rust a jednotlive mechanismy rustu GaN nanokrystalu. V dalsm jsou popsany kovove nanocastice a jejich opticke vlastnosti umoznujc zesilovan fotoluminiscence na zaklade interakce plasmonu a GaN. Experi- mentaln cast se zabyva prpravou GaN nanokrystalu s Ag jadrem ve ctyrech krocch. Prvne jsou Ag nanocastice naneseny na substrat Si(111). Nasledne se nechaj zoxidovat. Tretm krokem je depozice Ga a poslednm je nitridace. Jednotlive kroky byly opti- malizovany a analyzovany ruznymi metodami, jako je XPS, SEM, fotoluminiscence a Ramanova spektroskopie.
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Design of the carbon atomic source for deposition of graphene in UHV
Čalkovský, Vojtěch ; Bábor, Petr (referee) ; Mach, Jindřich (advisor)
This bachelor's thesis deals with the design of the atomic carbon source for deposition of graphene layers in UHV conditions. In the first part are briefly described the problems of epitaxial growth, the theory of atomic beams and theory of sublimation. The second part is aimed on graphene description, namely on his properties and on the growth of graphene layers, especially by molecular beam epitaxy. The third part contains brief description of detection and analysis methods of carbon atomic beams. In the practical part of this bachelor's thesis the design and the numeric calculations were made in Simion 8.0 and EOD program. Afterwards the atomic carbon source was constructed. In the conclusion are discussed the obtained results.
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