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Interaction of low-energy electrons with graphene field effect transistors
Vysocký, Filip ; Kunc, Jan (referee) ; Čechal, Jan (advisor)
This diploma thesis is focused on fabrication of graphene field-effect transistors, characterisation of their transport properties and investigation of low-energy electron beam influence on the devices' properties under UHV conditions. The theoretical part of this work describes graphene fabrication methods, options of graphene transfer onto the substrates for graphene field-effect transistor manufacture. Furthermore, model of graphene doping via electrostatic interaction or photon, resp. electron beam exposition is explained. The experimental part of this work consist of manufacture of the graphene field-effect transistor in order to examine the change of its transport properties induced by doping of the graphene via low-energy electron beam exposition.
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Transport properties of single graphene domains
Vysocký, Filip ; Kormoš, Lukáš (referee) ; Procházka, Pavel (advisor)
This bachelor thesis is focused on the preparation of single graphene domains by chemical vapor deposition method, its transfer onto non-conductive substrates and subsequent fabrication of the grapehene field effect transistors. The theoretical part of the tesis deals predominantly with different procedures of graphene production. The practical part of the thesis describes the production of graphene field effect transistors by electron beam lithography and the measurement of their transport properties.
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Interaction of low-energy electrons with graphene field effect transistors
Vysocký, Filip ; Kunc, Jan (referee) ; Čechal, Jan (advisor)
This diploma thesis is focused on fabrication of graphene field-effect transistors, characterisation of their transport properties and investigation of low-energy electron beam influence on the devices' properties under UHV conditions. The theoretical part of this work describes graphene fabrication methods, options of graphene transfer onto the substrates for graphene field-effect transistor manufacture. Furthermore, model of graphene doping via electrostatic interaction or photon, resp. electron beam exposition is explained. The experimental part of this work consist of manufacture of the graphene field-effect transistor in order to examine the change of its transport properties induced by doping of the graphene via low-energy electron beam exposition.
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|
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Transport properties of single graphene domains
Vysocký, Filip ; Kormoš, Lukáš (referee) ; Procházka, Pavel (advisor)
This bachelor thesis is focused on the preparation of single graphene domains by chemical vapor deposition method, its transfer onto non-conductive substrates and subsequent fabrication of the grapehene field effect transistors. The theoretical part of the tesis deals predominantly with different procedures of graphene production. The practical part of the thesis describes the production of graphene field effect transistors by electron beam lithography and the measurement of their transport properties.
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