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Computer modeling of MOSFET transistor
Major, Jan ; Harwot, Ondřej (referee) ; Pokorný, Michal (advisor)
Work is focused on computer modeling of PN junction and MOSFET transistor in the program COMSOL Multiphysics and in program TiberCAD. The text is discussed on the drift and diffusion in semiconductors. Also shown is a method of modeling the PN junction and MOSFET transistor in the programs and compare models.
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Planar transmission line on semiconductro substrate
Chára, Pavel ; Harwot, Ondřej (referee) ; Pokorný, Michal (advisor)
The aim of this thesis is to acquaint with the various types of the planar transmission lines and discuss their properties. Subsequently, the development of the real models of selected lines and verification their properties by simulations using COMSOL Multiphysics. The second part deals with the modeling of the semiconductor substrate, which replacing the dielectric substrate used for the transmission lines in the first part. The final part deals with the verification of calculation results in a specialized program TiberCAD.
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Planar transmission line on semiconductro substrate
Chára, Pavel ; Harwot, Ondřej (referee) ; Pokorný, Michal (advisor)
The aim of this thesis is to acquaint with the various types of the planar transmission lines and discuss their properties. Subsequently, the development of the real models of selected lines and verification their properties by simulations using COMSOL Multiphysics. The second part deals with the modeling of the semiconductor substrate, which replacing the dielectric substrate used for the transmission lines in the first part. The final part deals with the verification of calculation results in a specialized program TiberCAD.
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Computer modeling of MOSFET transistor
Major, Jan ; Harwot, Ondřej (referee) ; Pokorný, Michal (advisor)
Work is focused on computer modeling of PN junction and MOSFET transistor in the program COMSOL Multiphysics and in program TiberCAD. The text is discussed on the drift and diffusion in semiconductors. Also shown is a method of modeling the PN junction and MOSFET transistor in the programs and compare models.
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