National Repository of Grey Literature 14 records found  1 - 10next  jump to record: Search took 0.00 seconds. 
Výzkum postupu pro přípravu aktivních a pasivních vlnovodů v polovodičích
Prajzler, V. ; Špirková, J. ; Oswald, J. ; Peřina, Vratislav ; Hüttel, I. ; Hamáček, J. ; Machovič, V. ; Burian, Z.
The magnetron sputtering was used to fabricate RE doped GaN layers fabricated by magnetron sputtering on various substrate using a gaseous mixture of nitrogen and argon as precursors. The doping of the GaN films with RE occurred simultaneously with the sputtering process when placing the metal RE pellets or RE powder onto the Ga2O3 target. The amount of the incorporated erbium increased with increasing weight of the RE pellets or RE powder. We observed photoluminescence emission at 1 550 nm due to the 4I13/2 → 4I15/2 transition under excitation at 488 nm and 980 nm.
Optical properties of the GaN on sapphire
Skalský, Miroslav ; Janta, Jiří ; Čtyroký, Jiří ; Stejskal, J. ; Hüttel, I.
The method of mode spectroscopy was used to measure optical properties of epitaxial layers of gallium nitride (GaN) deposited onto the sapphire substrate. The results of the measurement of the layer thickness, refractive indices, and the attenuation of guided modes at the wavelengths of 632.8 nm and 781 nm are presented. From experimental values of attenuation of different guided modes, the contributions of bulk absorption and scattering at the interfaces of the layer to the total optical loss in the waveguide are determined.

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