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Silver alloy wire-bonding
Búran, Martin ; Jankovský, Jaroslav (referee) ; Řezníček, Michal (advisor)
This project deals with interconnection of semiconductor chips, especially interconnection using silver alloys. First part of this project contains interconnection methods and comparison of materials, which are used in wire bonding. Project include risk factors and the most frequent defects, which can appear during bonding. Next part contains testing proposals and testing of interconnected semiconductor chips.
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Optimalization of CMOS Chip Interconnection Process for Higher Current Load
Novotný, Marek ; Mach,, Pavel (referee) ; Hulenyi,, Ladislav (referee) ; Szendiuch, Ivan (advisor)
This work deals with silicon chip interconnection with a view to high current up to 10A. A wire bonding method is used for interconnection. The first part of investigation is focused on the modeling and simulation by the help of program ANSYS. Thermo mechanical stressing and current density is important parts of this research. Stress and current density distribution are results of the first part. The experimental part describes transition resistance, electro migration and thermal process in the connection of wire and chip pad. A controlled current source (0 – 10A) is used for measurement. The current source makes it possible to 4-point method measurement with sampling rate 1,5MHz.
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Silver alloy wire-bonding
Búran, Martin ; Jankovský, Jaroslav (referee) ; Řezníček, Michal (advisor)
This project deals with interconnection of semiconductor chips, especially interconnection using silver alloys. First part of this project contains interconnection methods and comparison of materials, which are used in wire bonding. Project include risk factors and the most frequent defects, which can appear during bonding. Next part contains testing proposals and testing of interconnected semiconductor chips.
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Optimalization of CMOS Chip Interconnection Process for Higher Current Load
Novotný, Marek ; Mach,, Pavel (referee) ; Hulenyi,, Ladislav (referee) ; Szendiuch, Ivan (advisor)
This work deals with silicon chip interconnection with a view to high current up to 10A. A wire bonding method is used for interconnection. The first part of investigation is focused on the modeling and simulation by the help of program ANSYS. Thermo mechanical stressing and current density is important parts of this research. Stress and current density distribution are results of the first part. The experimental part describes transition resistance, electro migration and thermal process in the connection of wire and chip pad. A controlled current source (0 – 10A) is used for measurement. The current source makes it possible to 4-point method measurement with sampling rate 1,5MHz.
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