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Charge transport optical characterization in semiconductor radiation detectors
Ridzoňová, Katarína ; Belas, Eduard (advisor)
Measurements of DC photocurrent-voltage characteristic, photocurrents spectral response and laser induced transient current technique enable investigation of surface recombination centers, bulk trap levels and distribution of the inner electric field. In the presented work, the n- type planar CdZnTe detectors with quasi Ohmic contacts were studied by above mentioned methods. It has been shown that in the case of strongly absorbed light under the DC regime of illumination not only surface recombination influences the detector's transport properties. The effect of the space charge, created as a consequence of carriers trapped by the impurity levels, must be taken into account. Therefore some new theoretical models were created in order to describe measured photocurrent-voltage dependencies. Obtained data were fitted with the new theory and the mobility and surface recombination velocity for electrons were determined.
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Charge transport optical characterization in semiconductor radiation detectors
Ridzoňová, Katarína ; Belas, Eduard (advisor)
Measurements of DC photocurrent-voltage characteristic, photocurrents spectral response and laser induced transient current technique enable investigation of surface recombination centers, bulk trap levels and distribution of the inner electric field. In the presented work, the n- type planar CdZnTe detectors with quasi Ohmic contacts were studied by above mentioned methods. It has been shown that in the case of strongly absorbed light under the DC regime of illumination not only surface recombination influences the detector's transport properties. The effect of the space charge, created as a consequence of carriers trapped by the impurity levels, must be taken into account. Therefore some new theoretical models were created in order to describe measured photocurrent-voltage dependencies. Obtained data were fitted with the new theory and the mobility and surface recombination velocity for electrons were determined.
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Charge transport optical characterization in semiconductor radiation detectors
Ridzoňová, Katarína ; Belas, Eduard (advisor) ; Toušek, Jiří (referee)
Measurements of DC photocurrent-voltage characteristic, photocurrents spectral response and laser induced transient current technique enable investigation of surface recombination centers, bulk trap levels and distribution of the inner electric field. In the presented work, the n- type planar CdZnTe detectors with quasi Ohmic contacts were studied by above mentioned methods. It has been shown that in the case of strongly absorbed light under the DC regime of illumination not only surface recombination influences the detector's transport properties. The effect of the space charge, created as a consequence of carriers trapped by the impurity levels, must be taken into account. Therefore some new theoretical models were created in order to describe measured photocurrent-voltage dependencies. Obtained data were fitted with the new theory and the mobility and surface recombination velocity for electrons were determined.
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Photoconductivity, photoluminescence and charge collection in semiinsulating CdTe and CdZnTe
Zázvorka, Jakub ; Franc, Jan (advisor) ; Humlíček, Josef (referee) ; Oswald, Jiří (referee)
Title: Photoconductivity, photoluminescence and charge collection in semiinsulating CdTe and CdZnTe Author: Jakub Zázvorka Department: Institute of Physics of Charles University Supervisor of the doctoral thesis: prof. Ing. Jan Franc, DrSc., Institute of Physics of Charles University. Abstract: Cadmium telluride and its compounds with zinc are the material of choice in spectroscopic room temperature high energy radiation detectors. The development of the final device is influenced by many parameters, including material impurities and defects, homogeneity and surface preparation. This thesis offers a comprehensive investigation of the detector fabrication process and of the parameters and physical effects influencing the spectroscopic resolution and performance of the detector. Structure of deep levels is investigated through photoluminescence and correlated with other electro-optical measurements dealing with the impact of structural imperfections of the material and their effect. The influence of resistivity and photoconductivity homogeneity on the detector performance is studied through electrical measurement of the charge carrier transport and charge collection of the sample. Obtained results are explained using the Fermi level shift theory and confronted with a theoretical model and calculations. The...
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